2009
DOI: 10.1143/jpsj.78.034714
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Electrical and Magnetic Properties of CeAu2Si2

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Cited by 12 publications
(6 citation statements)
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“…7. For CeAu Si 2 2 and CeNi Si 2 2 compounds, the values of χ T ( ) are in good agreement with those reported previously [2,18,21,33]. In the KL region, a Curie-Weiss behaviour is observed at higher temperatures and a deviation occurs at lower temperatures due to crystal-field effect.…”
Section: Electrical Resistivitysupporting
confidence: 90%
See 1 more Smart Citation
“…7. For CeAu Si 2 2 and CeNi Si 2 2 compounds, the values of χ T ( ) are in good agreement with those reported previously [2,18,21,33]. In the KL region, a Curie-Weiss behaviour is observed at higher temperatures and a deviation occurs at lower temperatures due to crystal-field effect.…”
Section: Electrical Resistivitysupporting
confidence: 90%
“…Transport and thermodynamic properties of polycrystalline and single-crystalline CeAu 2 Si 2 in particular, have been reported by several authors [1][2][3][17][18][19][20][21]. These studies confirm the occurrence of AF Kondo lattice behaviour with a Néel temperature T N which is strongly sample-dependent and range from 10.1 K to 6.6 K for the polycrystalline samples and from 8.8 K to 4 K for single crystals.…”
Section: Introductionsupporting
confidence: 79%
“…We grow CeAu 2 Si 2 crystals from Sn flux as described elsewhere [12,16]. A sample cut from a crystal with low residual resistivity ρ 0 ≈ 2 µΩcm is used for in-plane S(T ) and ρ(T ) measurements, which are carried out in a Bridgman-type anvil pressure cell in the temperature range 1.3 < T < 300 K with lead (Pb) as the p-gauge [17].…”
Section: Methodsmentioning
confidence: 99%
“…In the self-flux method, elements with a ratio of Ce 0.05 Au 0.475 Si 0.475 were melted in an alumina crucible inside a sealed evacuated quartz ampoule, held at 1120 • C for 6 h, followed by a slow cooling at 1.2 • C/h down to 850 • C. In the Sn-flux method, which is slightly different from that described in Ref. [24], an ingot of Ce:Au:Si = 1:20:3 was pre-synthesized by arc melting under an argon atmosphere, and flipped five times to ensure homogeneity. Big pieces of the crushed ingot were melted with Sn (CeAu 20 Si 3 :Sn = 1:50) in an alumina crucible inside a sealed evacuated quartz ampoule, held at 1150 • C for 48 h, followed by a slow cooling at 1 • C/h down to 650 • C. In both cases, crystals, separated from the flux by centrifugation, exhibit welldeveloped facets and have sizes of up to a few cubic millimeters.…”
Section: Methodsmentioning
confidence: 99%