Electrical and interface properties of PdAl/Au metal alloyed ohmic contacts on p-type GaN for high-temperature MEMS devices

Puneetha, Peddathimula; Reddy, M. Siva Pratap; Lee, Young-Woong; Jeong, Seonghoon; Lokanadham, R.; Park, Chinho; Pradeep, A. Guru; Reddy, V. Rajagopal

doi:10.1007/s10854-017-7609-8

Cited by 8 publications

(2 citation statements)

References 34 publications

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“…4(b). Wahid et al, 40) Su et al, 43) and Puneetha et al 45) also used this method to obtain the barrier height for ohmic contacts to p-GaN. The saturation current density ranges from 5.26 mA at 298 K to 6.92 mA at 400 K. The weak temperature dependence of saturation current density is another indicator that the tunneling current is the main transport mechanism for T141 sample.…”

Section: Resultsmentioning

confidence: 99%

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

2023

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We grew ZnO films at different temperatures on glass substrates using thermal atomic layer deposition and investigated the current conduction mechanism of Pt/ZnO junctions. For ZnO samples grown at 46 and 96°C, the current flow through the ZnO layer was not possible at low temperatures such as 298 and 320 K because the ZnO layer under Schottky contacts were wholly depleted. However, the current conduction was observed with increasing the temperature, which was found to be dominated by the Schottky emission at 360 and 380 K and the PooleFrenkel emission at 380 and 400 K. For ZnO sample grown at 141°C, the strong tunneling current could occur because very thin depletion region was formed because of the high carrier concentration of ZnO layer. The observed difference in the current conduction can provide a guidance how growth temperature of ZnO should be controlled to design the low-temperature grown ZnO based devices built on glass substrates.

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Section: Resultsmentioning

confidence: 99%

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

2023

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“…Gallium nitride (GaN) has attracted huge research interest due to its potential application in high-frequency, high-power, and optoelectronic devices [1,2]. Its distinctive properties such as wide band gap (∼3.4 eV), high breakdown field strength, and good thermal conductivity have allowed it to be exploited in the development of ultraviolet (UV) photodetectors, lightemitting diodes, metal-oxide-semiconductor field-effect transistors and capacitors, and high-electron-mobility transistors [3][4][5][6][7][8][9]. Metal-semiconductor (MS) Schottky junctions based on GaN have frequently displayed an anomalous leakage current under reverse bias voltages and a low breakdown voltage, resulting in poor device performance, poor thermal stability, and degradation of diode behavior [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Current–voltage characteristics and photovoltaic effect of a Au/ZnFe₂O₄/GaN Schottky junction

Ghimire

Dho

2020

J. Phys. D: Appl. Phys.

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A Au/ZnFe2O4/GaN Schottky junction with a semiconducting heteroepitaxial ZnFe2O4 insertion layer was prepared by using a combined synthesis process of pulsed laser deposition and sputtering. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Schottky junction, as well as its photovoltaic effect, were investigated under dark conditions or ultraviolet (UV) or blue illumination. Insertion of the semiconducting ZnFe2O4 interlayer clearly induced an increase in the rectification ratio. Based on I–V measurements in a forward bias region, the barrier height and ideality factor of the Au/ZnFe2O4/GaN junction were estimated to be about 0.89 eV and 1.58, respectively. On the other hand, C–V measurement in a reversed bias region suggested a relatively larger barrier height of ∼1.32 eV. The Au/ZnFe2O4/GaN junction showed an open-circuit voltage of ∼0.5 V under UV light and a clear switching photocurrent behavior with UV ON/OFF. A schematic band model with two interfaces, Au/ZnFe2O4 and ZnFe2O4/GaN, was proposed to explain the measured barrier heights in forward and reverse bias regions.

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Effect of Temperature on the Electrical and Current Transport Properties of Au/Nd2O3/n-GaN Metal/Interlayer/Semiconductor (MIS) Junction

2021

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Electrical and interface properties of PdAl/Au metal alloyed ohmic contacts on p-type GaN for high-temperature MEMS devices

Cited by 8 publications

References 34 publications

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

Current–voltage characteristics and photovoltaic effect of a Au/ZnFe₂O₄/GaN Schottky junction

Effect of Temperature on the Electrical and Current Transport Properties of Au/Nd2O3/n-GaN Metal/Interlayer/Semiconductor (MIS) Junction

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Electrical and interface properties of PdAl/Au metal alloyed ohmic contacts on p-type GaN for high-temperature MEMS devices

Cited by 8 publications

References 34 publications

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

Carrier Transport Mechanism of Pt Contacts to Atomic Layer Deposited ZnO on Glass Substrates

Current–voltage characteristics and photovoltaic effect of a Au/ZnFe2O4/GaN Schottky junction

Effect of Temperature on the Electrical and Current Transport Properties of Au/Nd2O3/n-GaN Metal/Interlayer/Semiconductor (MIS) Junction

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Current–voltage characteristics and photovoltaic effect of a Au/ZnFe₂O₄/GaN Schottky junction