Electrical and elastoresistance properties of evaporated thin films of bismuth

Saleh, Muhammad; Buxo, J.; Dorville, G.; Sarrabayrouse, G.

doi:10.1051/rphysap:01979001402040500

Cited by 6 publications

(12 citation statements)

References 18 publications

(41 reference statements)

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“…The positive value of the temperature coefficient of the conductivity -1 (semiconductor-like) for films from process n° 1 can then be interpreted in terms of the increasing probability of overcoming these barriers at the grain boundaries. Conversely the observation according to which the size of the disoriented polycrystalline grains increases with thickness for films from process n° 3 is consistent with the experimentally observed tendency for the mobility to decrease with thickness [1].…”

supporting

confidence: 90%

“…It has been found that the conductivity of films processed according to process n° 2 can be accounted for by the predictions of the F-S theory with the mean free path of the order of 1000 A which is in good agreement with the grain size estimate from the structural investigation with the aid of the Scanning Electron Microscope. Nevertheless, films from processes n° 1 and n° 3 cannot be reasonably described by the preceding theories and this appears to be due to the presence a high density of surface states. Indeed, the comparison between the conductivity values of films from processes n° 1 and n° 2 has allowed to evaluate this surface states density which for films of process n° 1 appears to be of the order of 2 x 1012 cm-2.…”

mentioning

confidence: 93%

“…Introduction. -Some electrical and electromechanical properties of thin bismuth films were presented previously [1]. The annealing process and the substrate temperature during evaporation have appeared to have an influence on these properties.…”

mentioning

confidence: 97%

“…-The structural study has been carried out on squared aluminium substrates of dimensions 40 x 40 mm. An insulating 10 ym thick resin layer was deposited on the substrate using the method of auto-regulated electrophoresis previously described [1]. Bismuth films of thicknesses comprised between 1 000 A and 3 000 A were deposited onto the resin layer by' thermal evaporation under vacuum of 10-6 torr, at a rate of evaporation of 50 Â/s.…”

mentioning

confidence: 99%

“…Different thermal treatments were given [1] and their effects with regards to their structural properties have been carefully analysed by using the following three techniques : 1) Reflection electron diffraction.…”

mentioning

confidence: 99%

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Structural study of bismuth films and its consequences on their electrical properties

Buxo

Saleh

Sarrabayrouse

et al. 1980

Rev. Phys. Appl. (Paris)

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2014 Les auteurs étudient les propriétés structurales des couches minces de bismuth à 1'aide des techniques suivantes : diffraction des électrons par réftexion, diffraction des rayons X, microscopie électronique par balayage et diffraction et microscopie électronique par transmission. Ils rappellent les propriétés électriques des couches minces de bismuth (mesures de conductivité et du facteur RH). Il apparait que les états de surface jouent un rôle déterminant dans les définitions des propriétés du facteur RH et de la conductivité. Cette conclusion est étayée par les résultats de 1'etude structurale. Une propriété importante du mécanisme de conduction telle que le libre parcours moyen des porteurs a été estimée et sa valeur est aussi en accord avec les résultats de l'étude structurale.La densité des états de surface ainsi que la hauteur de barrière associée aux joints de grain ont été évaluées en fonction des différentes techniques de preparation. Abstract. 2014 The structure of bismuth thin films prepared according to three different deposition techniques is inspected by : reflection electron diffraction, X-ray diffraction, scanning electron microscopy, transmission microscopy and electron diffraction. The electrical conduction properties, RH and conductance measurements, of these films are then discussed. It appears that surface states play a major role in dictating the properties of both RH and conductivity. This is clearly confirmed with the aid of the conclusions of the structural study. By comparing size effect theories with the conductivity data the carrier mean free path can be estimated to be of the order of 1 000 Å in good agreement with the observation of the film structure. The surface state density and the energy barrier that controls the carrier transport across the grain boundaries have also been evaluated as a function of the preparation technique.

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confidence: 90%

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confidence: 93%

mentioning

confidence: 97%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Structural study of bismuth films and its consequences on their electrical properties

Buxo

Saleh

Sarrabayrouse

et al. 1980

Rev. Phys. Appl. (Paris)

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Electrical and galvanomagnetic properties of undoped and doped polycrystalline bismuth films. I. Preparation and experimental characterization

Schnelle

Dillner

1989

Phys. Stat. Sol. (a)

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An investigation is made of the dependence of zero magnetic field resistivity as well as low m;ignetic field Hall and magnetoresistance coefficients of undoped as well as Te-, Sn-, and Ga-doped polycrystalline bismuth films on thickness and doping concentration in the temperature interval from 100 to 300 K. The films are deposited onto amorphous substrates by means of sirnultancous thermal cvaporation from two different sources for the host and dopant material, respectively. Doping does not alter the structure of the films significantly. The galvanomagnetic measurements are carried out using van der Pauw's technique with the magnetic ficld perpendicular to the film plane. Der spezifische Widerstand in Abwesenheit eines Magnetfeldes sowie die Hall-und Magnetowidcrstandskoeffizient,en im schwachen Magnetfeld von undotierten sowie von Te-, Sn-und Ga-dotierten polylrristallinen Wismutschichten werden in Abhangigkeit von der Schichtdicke und der Dotierungskonzentration bei Temperaturen zwischen 100 und 300 K untersucht. Die Beschichtung rrfolgt auf amorphen Substraten durch gleichzeitige thermische Verdampfung aus zwri unterschiedlichen Quellen ftir das Wirtsbzw. Dotierungsmaterinl. Die Dotierung veriindert die Schic1it.st,ruktur nicht signifikant. Die galvnnoniagnctischen Messungen werden mit der van der Panwschrn Methode in einem senkrecht zur Schichtebcne gerichteten Magnetfeld durchgefuhrt. Helmholtzweg 4, DDR-6900 Jena, GDR.

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Effet dimensionnel classique dans des couches minces de bismuth et d'antimoine

Pariset

1982

Thin Solid Films

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Electrical and elastoresistance properties of evaporated thin films of bismuth

Cited by 6 publications

References 18 publications

Structural study of bismuth films and its consequences on their electrical properties

Structural study of bismuth films and its consequences on their electrical properties

Electrical and galvanomagnetic properties of undoped and doped polycrystalline bismuth films. I. Preparation and experimental characterization

Effet dimensionnel classique dans des couches minces de bismuth et d'antimoine

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