Electrical and Dielectric Properties of a Dy2O3 MOS Capacitor

Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al2O3 Interlayers

“…In this work, the conductance and voltage characteristic curves of the Al/ErSmO/Al 2 O 3 /InP-MOS capacitor were attained in the frequency range from 50 kHz to 1 MHz by the conductance method, as shown in Figure . When a MOS device receives an AC signal, the conductance-generated signal is affected by local interface states in the semiconductor band gap and the interaction between majority carriers . The conductance method was used to explore the occupancy of the interface traps in the InP band gap near the Fermi level with changes in gate voltage and frequency .…”

“…When a MOS device receives an AC signal, the conductance-generated signal is affected by local interface states in the semiconductor band gap and the interaction between majority carriers. 46 The conductance method was used to explore the occupancy of the interface traps in the InP band gap near the Fermi level with changes in gate voltage and frequency. 47 At a specific gate voltage, the G− V curves for all frequencies show a single peak characteristic with peak amplitudes that increase with frequency.…”