Electric tunable of electron spin polarization in hybrid magnetic–electric barrier structures

A bias-tunable electron-spin filter based on a hybrid ferromagnetic-Schottky-metal and semiconductor nanostructure

“…They investigated the GMR effect of this device and showed that the value of magnetoresistance (MR) ratio can be adjusted by the structural parameters and the EB height. Based on Zhang's work [14], Xu et al [15] proposed an electron-* Corresponding author. spin filter device, and they pointed out that the electron-spin polarization in such a device could be manipulated by the EB height and the structural parameters.…”