Electric, thermoelectrical and photoelectric properties of CuGaxIn1−xSe2 thin films

Mansour, B. A.; Zawawi, I. K. El; Abdel-All, A.; Shaban, H.

doi:10.1016/j.jpcs.2004.03.007

Cited by 5 publications

(3 citation statements)

References 9 publications

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“…and the CIGS layer [11,12]. The resistivity values obtained from CIGS layers deposited on glass substrates are in the same range as those reported by Mansour et al [13]. The CIGS thin films surface images by scanning electron microscopy (SEM) (Fig.…”

Section: Resultssupporting

confidence: 81%

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

Kouhlane

Bouhafs

Nwadiaru

et al. 2022

JSMPM

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OPAL2 calculator has proved to be an effective technique for simulating optical losses in various materials for various applications. This study demonstrates the use of this softwareto simulate the transmittance (T) and reflectance (R) and hence evaluate the optical properties of flash evaporated CuIn1-xGaxSe2(CIGS) thin films with a ratio x = 0.28 deposited on stainless-steel (STS) and glass substrates. The simulation results exhibit excellent accuracy of the modeled design presented in this work. The CIGS with a ratio of gallium x = 0.3 showed the best matching between simulated and experimental T and R patterns. Moreover, the simulation shows that an increase in the gallium concentration increases optical losses. Finally, the results demonstrate the application of the freeware program OPAL2 to practically simulate the optical proprieties of CIGS thin films.

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Section: Resultssupporting

confidence: 81%

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

Kouhlane

Bouhafs

Nwadiaru

et al. 2022

JSMPM

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“…The values of E g2 (1.24–1.55, correspond to the Γ 6v − Γ 6c (crystal‐field‐split level to conduction‐band minimum) and transition Γ 7v − Γ 6v (spin–orbit‐split level to conduction‐band minimum). [ 24 ] Moreover, in other I‐III‐VI 2 ternary semiconductors, AgGaSe 2 , CuAlS 2, and CuGaTe 2 , three transition energies corresponding to the valence‐band splitting had been reported by other researchers. [ 25,26 ]…”

Section: Resultsmentioning

confidence: 92%

Studying the Optical and Electrical Properties of CuGa_0.5In_0.5Se₂ Chalcopyrite Due to Substrate Temperature and Gamma Irradiation

Moustafa

Taha

Abdel‐Samad

2022

Physica Status Solidi (b)

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Thin films of chalcopyrite CuGa0.5In0.5Se2 (CGIS) with thickness ≈2000 Å are prepared by thermal evaporation method at different values of substrate temperature (Ts) 373, 473, and 573 K. Crystal structure and elemental chemical composition are examined by X‐ray diffraction and energy dispersive X‐ray analysis, respectively. The optical constants of the films in the spectral range 200 nm ≤ λ ≤ 2500 nm are calculated. It is found that the transmittance and band gap (Eg) decrease with increasing the substrate temperature (Ts) while Urbach energy increases with the increase of Ts. The Wemple–DiDomenico (WDD) model is used to calculate the oscillator parameters. Furthermore, the prepared films are irradiated with γ‐ray at different doses 2, 4, and 8 kGy. The results reveal that the optical band gap increases and Urbach energy decreases as γ‐doses increase. Finally, the substrate temperature and γ irradiation upon the electrical resistivity are studied. Consequently, it is found that the electrical resistivity decreases with the increase of both the substrate temperature and γ‐irradiation. In conclusion, the γ‐irradiation stimulates a change in optical parameters and electrical resistivity which can be utilized for industrial dosimetric purposes.

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“…Because of the strong effects of CIGS composition on device performance, many research groups have made hard efforts to quantify the absorber composition after deposition, using various analytical techniques. General methods to determine the stoichiometry of thin films for solar cell applications are X‐ray fluorescence (XRF), wavelength‐dispersed electron probe microanalysis (EPMA), particle‐induced X‐ray emission, glow discharge optical emission spectrometry, and inductively coupled plasma (ICP) optical emission spectrometry …”

Section: Introductionmentioning

confidence: 99%

Quantitative analysis for CIGS thin films by surface analytical techniques

Kim

Jang

Yoon

et al. 2014

Surface & Interface Analysis

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The compound semiconductor Cu(In,Ga)Se 2 (CIGS) is well known as the next-generation solar cell material because of its high absorption coefficient for solar radiation, suitable band gap, ability to be deposited on flexible substrate materials, and producing highly flexible and lightweight solar panels. In order to improve the performance of solar cells, a quantitative and depth-resolved elemental analysis of photovoltaic thin films is strongly required. In this study, we determined the average concentration of the major elements, Cu, In, Ga, and Se in fabricated CIGS thin films, using inductively coupled plasma atomic emission spectrometry, X-ray fluorescence, and electron probe microanalysis. Depth profiling results for CIGS samples using AES, XPS, magnetic sector SIMS, and time of flight SIMS were also obtained to compare their atomic concentration results. In the SIMS technique, detection of MCs + clusters reduced possible matrix effects because of the variant concentrations of In and Ga. The reproducibility and accuracy of quantitative analysis were investigated as a function of ion sputtering energy. The compositional distributions of CIGS absorber layers as measured by MCs + -SIMS showed good agreement with those of AES and XPS.

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Electric, thermoelectrical and photoelectric properties of CuGaxIn1−xSe2 thin films

Cited by 5 publications

References 9 publications

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

Studying the Optical and Electrical Properties of CuGa_0.5In_0.5Se₂ Chalcopyrite Due to Substrate Temperature and Gamma Irradiation

Quantitative analysis for CIGS thin films by surface analytical techniques

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Electric, thermoelectrical and photoelectric properties of CuGaxIn1−xSe2 thin films

Cited by 5 publications

References 9 publications

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

Optical Properties Evaluation of CuIn1-xGaxSe2 Thin Films Using OPAL2 Calculator

Studying the Optical and Electrical Properties of CuGa0.5In0.5Se2 Chalcopyrite Due to Substrate Temperature and Gamma Irradiation

Quantitative analysis for CIGS thin films by surface analytical techniques

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Product

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Studying the Optical and Electrical Properties of CuGa_0.5In_0.5Se₂ Chalcopyrite Due to Substrate Temperature and Gamma Irradiation