Electric Refractory Materials

Kumashiro, Y.

doi:10.1201/9780203908181

Cited by 97 publications

(59 citation statements)

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“…synthesized material, which has been synthesized in different crystalline phases, of which hexagonal BN (h-BN) and cubic BN (c-BN) are commonly used. Cubic BN does not occur in nature [19,20]. Recent studies have led to the conclusion that c-BN composites have seen higher improvements of thermal conductivities compared to their h-BN counterparts [6,21], which can be attributed to the significantly higher bulk thermal conductivity of c-BN along with its isotropic properties.…”

Section: Introductionmentioning

confidence: 92%

“…In contrary, for the cases involving c-BN, and hence, the cBN and the two multiphase composites, ε′ was found to be higher than what was observed for NE, especially with decreasing frequencies. Since the values of the relative permittivity for c-BN increase from high frequency ε͚ = 4.5 towards the static ε 0 = 7.1 [19], it appears that the submicrometric c-BN particles dictate the dielectric permittivity for the cBN and MP composites.…”

Section: Dielectric Spectroscopymentioning

confidence: 99%

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Functional epoxy composites for high voltage insulation involving c-BN and reactive POSS as compatibilizer

2015

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Epoxy resins modified with only Polyhedral Oligomeric Silsesquioxanes (POSS) or cubic boron nitride (c-BN), as well as multiphase composites containing both, POSS and c-BN, were fabricated and investigated. Two different types of reactive liquid POSS with molecule sizes of approximately 2 nm, viz. Triglycidylisobutyl-POSS (TGIB-POSS) and Glycidyl-POSS were added in contents of 1 wt% to form single-phase and multiphase composites. Submicrometric c-BN, in contents of 5 wt%, was used for the respective single-phase composite as well as in the multiphase samples to create multifunctional nanostructured composites. All specimens were characterized by Broadband Dielectric Spectroscopy (BDS), dielectric breakdown experiments, Differential Scanning Calorimetry (DSC) and thermal conductivity measurements. The single-phase POSS composites have seen up to 15% improved dielectric breakdown strengths and enhanced thermal conductivities by up to 20%. The single-phase c-BN composite revealed the most distinct improvement in thermal conductivity of more than 25%, along with a reduction in dielectric breakdown strength of approximately 18%. Additionally, the dielectric and thermal properties of the multiphase composites containing 1 wt% POSS and 5 wt% c-BN, were found to be solely dictated by the submicrometric c-BN particles. SEM observations revealed a significantly improved dispersion of the c-BN particles in the presence of POSS for the multiphase composites, suggesting that POSS acts as a compatibilizer between organic epoxy matrix and inorganic filler particles.

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Section: Introductionmentioning

confidence: 92%

Section: Dielectric Spectroscopymentioning

confidence: 99%

Functional epoxy composites for high voltage insulation involving c-BN and reactive POSS as compatibilizer

2015

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“…26,27 For 3C-SiC, the carrier concentration can be controlled in the range of 10 15 -10 19 cm −3 (Ref. [28]). In the present work we use d=40 nm corresponding to a bulk doping density about 1.5×10 16 …”

Section: Calculational Methodsmentioning

confidence: 99%

Thermoelectric properties of silicon carbide nanowires with nitride dopants and vacancies

Xu¹,

Zheng²,

Su³

2011

Phys. Rev. B

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The thermoelectric properties of cubic zincblend silicon carbide nanowires (SiCNWs) with nitrogen impurities and vacancies along [111] direction are theoretically studied by means of atomistic simulations. It is found that the thermoelectric figure of merit ZT of SiCNWs can be significantly enhanced by doping N impurities together with making Si vacancies. Aiming at obtaining a large ZT, we study possible energetically stable configurations, and disclose that, when N dopants locate at the center, a small number of Si vacancies at corners are most favored for n-type nanowires, while a large number of Si vacancies spreading into the flat edge sites are most favored for p-type nanowires. For the SiCNW with a diameter of 1.1 nm and a length of 4.6 nm, the ZT value for the n-type is shown capable of reaching 1.78 at 900K. The conditions to get higher ZT values for longer SiCNWs are also addressed.

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“…The activation energies are 0.11 eV for the room-temperature-deposited film Transformation of intrinsically p-type boron-rich boride materials to n-type by doping is not a trivial task because of the difficulty in overcompensating for the high-density trap states in the band gap; an extremely high donor concentration, on the order of ϳ10 20 cm −3 , is generally required to enable this transformation. 19 In this study, however, n-type carriers were obtained in AlMgB 14 films at much lower donor concentrations. This is probably because the six intrinsic trap states, which basically depend on the vibrational modes of B 12 icosahedra, 15 were not fully developed at the low deposition temperatures.…”

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confidence: 94%

Electrical transport in amorphous semiconducting AlMgB14 films

Tian

Shinar

et al. 2004

Applied Physics Letters

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The electrical transport properties of semiconducting AlMgB14 films deposited at room temperature and 573K are reported in this letter. The as-deposited films are amorphous, and they exhibit high n-type electrical conductivity, which is believed to stem from the conduction electrons donated by Al, Mg, and/or Fe impurities in these films. The film deposited at 573K is less conductive than the room-temperature-deposited film. This is attributed to the nature of donor or trap states in the band gap related to the different deposition temperatures.

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Electric Refractory Materials

Cited by 97 publications

References 0 publications

Functional epoxy composites for high voltage insulation involving c-BN and reactive POSS as compatibilizer

Functional epoxy composites for high voltage insulation involving c-BN and reactive POSS as compatibilizer

Thermoelectric properties of silicon carbide nanowires with nitride dopants and vacancies

Electrical transport in amorphous semiconducting AlMgB14 films

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