Electric measurement and magnetic control of spin transport in InSb-based lateral spin devices

Viglin, N. A.; Ustinov, V. V.; Demokritov, S. O.; Шориков, А. О.; Bebenin, N. G.; Tsvelikhovskaya, V. M.; Pavlov, T. N.; Патраков, Е. И.

doi:10.1103/physrevb.96.235303

Cited by 25 publications

(11 citation statements)

References 20 publications

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“…Thus the polarized electron transport can be observed in a lateral spin valve based on such materials 14,15 . The A 3 B 5 semiconductors are very promising materials for lateral spin-dependent transport [16][17][18] . E.g.…”

Section: Introductionmentioning

confidence: 99%

Diode effect in the lateral spin valve

Karashtin

Tatarskiy

2019

J. Phys.: Condens. Matter

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We propose a possible experimental setup for nonreciprocal electron transport in a lateral spin valve due to noncoplanar distribution of magnetic moment (and field) in the system. Some metals (Al, Cu) and semiconductors (GaAs, InSb etc.) demonstrate spin accumulation even at room temperatures due to large spin flip lengths (0.3-2.0 µm). The Hanle precession was observed in lateral spin valves based on such materials and two parallel magnetic electrodes. We provide theoretical estimations which show that the nonreciprocal effect in a configuration with non-parallel magnetic electrodes is of the same order of value as the effect that arise due to Hanle precession. This makes it possible to observe the nonreciprocal electron transport as a manifestation of the noncommutativity of spin-1/2 algebra for them in the proposed system. Such property of noncoplanar magnetic system has a potential of application in a noncoplanar type of spintronic devices.

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Section: Introductionmentioning

confidence: 99%

Diode effect in the lateral spin valve

Karashtin

Tatarskiy

2019

J. Phys.: Condens. Matter

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“…Из всех соединений А III В V , InSb и InAs обладают рекордными значениями подвижности электронов, что делает возможным использование этих полупроводников для увеличения быстродействия интегральных схем [5]. В некоторых материалах А III В V наблюдается достаточно большая величина спин-орбитального расщепления, что делает их весьма привлекательными с точки зрения создания приборов полупроводниковой спинтроники и последующего использования для квантовой обработки информации [7].…”

Section: Introductionunclassified

Диффузия и взаимодействие In и As, имплантированных в пленки SiO-=SUB=-2-=/SUB=-

Тысченко¹,

Voelskow

Михайлов³

et al. 2019

Физика И Техника Полупроводников

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By means of Rutherford backscattering spectrometry, electron microscopy, and energy-dispersive X-ray spectroscopy, the distribution and interaction of In and As atoms implanted into thermally grown SiO_2 films to concentrations of about 1.5 at % are studied in relation to the temperature of subsequent annealing in nitrogen vapors in the range of T = 800–1100°C. It is found that annealing at T = 800–900°C results in the segregation of As atoms at a depth corresponding to the As^+-ion range and in the formation of As nanoclusters that serve as sinks for In atoms. An increase in the annealing temperature to 1100°C yields the segregation of In atoms at the surface of SiO_2 with the simultaneous enhanced diffusion of As atoms. The corresponding diffusion coefficient is D _As = 3.2 × 10^–14 cm^2 s^–1.

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“…Полупроводниковая спинтроника за последние три десятилетия прошла путь от принципиальных идей спинового транзистора [1] до реализации спиновых устройств с электрическими инжекцией и детектированием поляризованных по спину электронов в полупроводниках Si [2], GaAs [3] и InSb [4]. Весьма важную роль в успешной инжекции спин-поляризованного тока играет качество интерфейса полупроводника и ферромагнитного металлического инжектора, которое предполагает совершенство структуры и состава этих материалов, четкую (без взаимной диффузии) и гладкую границу между ними.…”

Section: Introductionunclassified

Очистка от оксидов поверхности пластин полупроводника InSb для создания латеральных спиновых клапанов

Viglin¹,

Gribov²,

Цвелиховская³

et al. 2019

Физика И Техника Полупроводников

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AbstractsThe formation conditions of a smooth and oxide-free surface of InSb semiconductor with the purpose of fabricating lateral spin devices based on it are investigated. The dry etching rate by Ar ions of the surface of the crystalline faces (100) of InSb plates as well as a variation in their roughness depending on the power supplied to ion etching devices are investigated. The degree of oxidation of the semiconductor surface exposed to air after ion cleaning and annealing in molecular hydrogen are evaluated. Based on comparison of the efficiency of spin injection in devices formed with semiconductors subjected to various types of treatment, a conclusion is made about the parameters of optimal preparation of the surface of the InSb wafers for the fabrication of lateral spin devices.

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Electric measurement and magnetic control of spin transport in InSb-based lateral spin devices

Cited by 25 publications

References 20 publications

Diode effect in the lateral spin valve

Diode effect in the lateral spin valve

Диффузия и взаимодействие In и As, имплантированных в пленки SiO-=SUB=-2-=/SUB=-

Очистка от оксидов поверхности пластин полупроводника InSb для создания латеральных спиновых клапанов

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