Electric isolation of porous silicon by electro generated polyethyleneimine film, comparison to thermal oxide

Meskini, O.; Mghaieth, Ridha; Herlem, Guillaume; Fahys, Bernard; Abdelghani, Adnane; Jaffrézic‐Renault, Nicole; Ponsonnet, Laurence

doi:10.1016/j.msec.2005.10.014

Cited by 2 publications

(1 citation statement)

References 22 publications

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“…The band centred at 1080 cm -1 corresponding to the Si-O stretching vibration mode widens. The shoulder in the 1100-1250 cm -1 region, corresponds to the out-of-phase Si-O stretching vibration mode [14][15][16][17]. Compared with the (ox-Si) spectrum, the Si-O x related vibration bands are largely strengthened in the (ox-PS) spectra.…”

Section: Rapid Thermal Oxidation Of Porous Siliconmentioning

confidence: 99%

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n⁺⁺/n regions

Dimassi

Jafel

Lajnef

et al. 2010

Phys. Status Solidi C

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The realization of screen‐printed contacts on silicon solar cells requires highly doped regions under the fingers and lowly doped and thin ones between them. In this work, we present a low‐cost approach to fabricate selective emitter (n++/n doped silicon regions), using oxidized porous silicon (ox‐PS) as a mask. Micro‐periodic fingers were opened on the porous silicon layer using a micro groove machining process. Optimized phosphorous diffusion through the micro grooved ox‐PS let us obtain n++ doped regions in opened zones and n doped large regions underneath the ox‐PS layer. The dark I‐V characteristics of the obtained device and Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer show the possibility to use PS as a dielectric layer. The Light Beam Induced Current (LBIC) mapping of the realized device, confirm the presence of a micro periodic n++/n type structure. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Rapid Thermal Oxidation Of Porous Siliconmentioning

confidence: 99%

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n⁺⁺/n regions

Dimassi

Jafel

Lajnef

et al. 2010

Phys. Status Solidi C

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Local Isolation of High-Voltage Photovoltaic Cells Using Buried Layers of Oxidized Porous Silicon

Asscher

Sagi

Tamburu

et al. 2019

IEEE J. Photovoltaics

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Electric isolation of porous silicon by electro generated polyethyleneimine film, comparison to thermal oxide

Cited by 2 publications

References 22 publications

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n⁺⁺/n regions

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n⁺⁺/n regions

Local Isolation of High-Voltage Photovoltaic Cells Using Buried Layers of Oxidized Porous Silicon

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Electric isolation of porous silicon by electro generated polyethyleneimine film, comparison to thermal oxide

Cited by 2 publications

References 22 publications

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n++/n regions

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n++/n regions

Local Isolation of High-Voltage Photovoltaic Cells Using Buried Layers of Oxidized Porous Silicon

Contact Info

Product

Resources

About

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n⁺⁺/n regions

Porous silicon used as an oxide diffusion mask to produce a periodic micro doped n⁺⁺/n regions