Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain

Bridger, P. M.; Bandić, Zvonimir; Piquette, E. C.; McGill, T. C.

doi:10.1116/1.590819

Cited by 8 publications

(9 citation statements)

References 17 publications

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“…5, EFM has been advanced by including the effect of a laser beam in GaN. Surface potential can be measured by adjusting the V 0 on the tip so that the tip experiences a minimum force F from the sample.…”

Section: Sample and Experimental Methodsmentioning

confidence: 99%

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Light induced electrostatic force spectroscopy: Application to local electronic transitions in InN epifilms

Chen

et al. 2006

Journal of Applied Physics

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Articles you may be interested inInGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers A technique based on electrostatic force microscopy in which light is used to change the charge states of the local region in a solid is introduced and demonstrated. This technique provides a unique feature that it can be used to probe local electronic transitions of a solid in a submicron scale. As an illustration, it has been applied to study local electronic structure in InN epifilms. Combining with atomic force microscopy, it is found that surface state density in the dale region is larger than that in the pinnacle region and an electron accumulation layer does exist on the surface. In addition, the magnitude of the surface band bending obtained for the regions with different surface states is consistent with the result measured by other techniques. We point out that light induced scanning electrostatic force spectroscopy is a very useful tool to probe the local electronic transitions of a solid in a submicron scale with high sensitivity.

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Section: Sample and Experimental Methodsmentioning

confidence: 99%

“…4,5 However, one of the drawbacks is that the SEFM technique cannot tell us where the energy levels of the detected charges are. Scanning probe microscopy has become an important characterization technique for semiconductors in general.…”

Section: Introductionmentioning

confidence: 99%

Light induced electrostatic force spectroscopy: Application to local electronic transitions in InN epifilms

Chen

et al. 2006

Journal of Applied Physics

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“…Fluorescent nanoparticles fi nd wide applications in labeling and tagging, in particular in biomedical research, as a replacement for the commonly used molecular organic fl uorophores. [1][2][3][4][5][6] A relatively large surface area of nanoparticles potentially allows functionalizing with multiple tagging molecules. Furthermore, fl uorescence of a single fl uorescent nanoparticle is typically brighter than from a single dye molecule.…”

Section: Introductionmentioning

confidence: 99%

Functionalized Ultrabright Fluorescent Mesoporous Silica Nanoparticles

Palantavida

Guz

Sokolov

2013

Part & Part Syst Charact

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The problem of functionalization of recently reported ultrabright fluorescent mesoporous silica nanoparticles while preserving their fluorescent brightness is solved. This is a serious issue because of the open geometry of mesoporous channels and physical encapsulation of fluorescent dye inside those channels. Amine modification of mesoporous nanoparticles is described to preserve the brightness comparable to that of earlier reported ultrabright silica nanoparticles. Scaling to 40 nm sized particles, amine‐functionalized nanoparticle have fluorescent brightness equivalent to the one of 630 free rhodamine 6G (R6G) dye molecules in water. To demonstrate further most challenging functionalization, which relies on using organic‐solvent‐based chemistry, folic acid conjugation is developed. Two different methods are used to conjugate folites to the amine functionalities. Both methods result in a decrease of fluorescence intensity, which can nonetheless still be called ultrabright. The brightness can drop to either 310 or 80 R6G dye molecules per particle of nominal diameter of 40 nm.

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“…KPFM has been used to measure surface (contact) potentials [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] as a function of polarity, doping and surface treatment, surface band bending [22], and bare surface barrier heights [24] of III-nitrides. The measurement of these electronic properties is critical for designing devices based on III-nitrides.…”

Section: Characterization Of Surface Electronic Properties By Spmmentioning

confidence: 99%

“…They employed scanning capacitance microscopy (SCM) to investigate threading dislocations in GaN. Since then, SCM [13][14][15], electrostatic force microscopy (EFM) [16][17][18][19][20], Kelvin probe force microscopy (KPFM) [18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36],conductive-tip atomic force microscopy (C-AFM) [35][36][37][38][39][40][41][42][43][44][45][46], piezoresponse force microscopy (PFM) [47][48][49][50] and scanning gate microscopy (SGM) [51] have all been employed to characterize III-nitride films and surfaces.…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Characterization of Electronic and Electrical Properties of III-Nitrides by Scanning Probe Microscopy

Rodriguez

Gruverman

Nemanich

Scanning Probe Microscopy

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Recent interest in the technological potential of nitride-based semiconductors has led to the development and commercialization of a wide range of electronic devices. The nanoscale investigation of the electric properties of III-nitride thin films, bulk crystals, and heterostructures is of considerable interest for determining how interfaces, defects, and inversion domain boundaries affect device performance. The pyroelectric nature of wurtzitic III-nitrides is characterized by a spontaneous polarization that exists without the presence of an external field and by a polarization-bound surface charge. Scanning probe-based measurements of surface contact potentials and surface band bending in these materials, which are of crucial importance to device design, are summarized in this review chapter. In addition, the role of charged defects on device performance is explored by scanning probe techniques. Lastly, the measurement of polarity and of the screening mechanism of III-nitrides, which are fundamental issues for the fabrication of devices based on polarity effects, are discussed. This chapter provides a critical analysis of the contributions made by scanning probe-based techniques toward a deeper understanding of the III-nitride material system.

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Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain

Cited by 8 publications

References 17 publications

Light induced electrostatic force spectroscopy: Application to local electronic transitions in InN epifilms

Light induced electrostatic force spectroscopy: Application to local electronic transitions in InN epifilms

Functionalized Ultrabright Fluorescent Mesoporous Silica Nanoparticles

Nanoscale Characterization of Electronic and Electrical Properties of III-Nitrides by Scanning Probe Microscopy

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