Electric-Field Tuning of the Surface Band Structure of Topological Insulator<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Sb</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Thin Films

Zhang, Tong; Ha, Jung-Eun; Levy, Niv; Kuk, Young; Stroscio, Joseph A.

doi:10.1103/physrevlett.111.056803

Cited by 75 publications

(68 citation statements)

References 37 publications

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“…In order to realize such exotic applications, it would be beneficial to be able to selectively manipulate the electronic properties of the TSS. As viable alternatives to electrostatic gating (e.g., [11][12][13][14]), extensive research has been carried out into two different means of effective manipulation, namely, changes in the bulk stoichiometry of the TI material (e.g., [15][16][17][18]) and controlled surface decoration of the TI crystal (e.g., [19][20][21]). …”

Section: Introductionmentioning

confidence: 99%

Dirac states with knobs on: Interplay of external parameters and the surface electronic properties of three-dimensional topological insulators

et al. 2015

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Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, i.e., the provision of knobs with which to tune properties, stoichiometric variation and surface decoration are two effective approaches that have been followed. In angleresolved photoelectron spectroscopy (ARPES) experiments, both approaches are seen to lead to electronic band-structure changes. Most importantly, such approaches result in variations of the energy position of bulk and surface-related features and the creation of two-dimensional electron gases. The data presented here demonstrate that a third manipulation handle is accessible by utilizing the amount of super-band-gap light a topological insulator surface has been exposed to under typical ARPES experimental conditions. Our results show that this third knob acts on an equal footing with stoichiometry and surface decoration as a modifier of the electronic band structure, and that it is in continuous and direct competition with the latter. The data clearly point towards surface photovoltage and photoinduced desorption as the physical phenomena behind modifications of the electronic band structure under exposure to high-flux photons. We show that the interplay of these phenomena can minimize and even eliminate the adsorbate-related surface band bending on typical binary, ternary, and quaternary Bi-based topological insulators. Including the influence of the sample temperature, these data set up a detailed framework for the external control of the electronic band structure in topological insulator compounds in an ARPES setting. Four external knobs are available: bulk stoichiometry, surface decoration, temperature, and photon exposure. These knobs can be used in conjunction to fine tune the band energies near the surface and consequently influence the topological properties of the relevant electronic states.

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Section: Introductionmentioning

confidence: 99%

Dirac states with knobs on: Interplay of external parameters and the surface electronic properties of three-dimensional topological insulators

et al. 2015

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“…5 We report the local observation of the band structure of topological surface states in Bi 1. 5 Sb 0.5 Te 1.7 Se 1.3 using scanning tunneling microscopy/spectroscopy (STM/STS).…”

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confidence: 99%

“…5 We report the local observation of the band structure of topological surface states in Bi 1. 5 Sb 0.5 Te 1.7 Se 1.3 using scanning tunneling microscopy/spectroscopy (STM/STS). The energymomentum dispersion relation is locally deduced by extracting the Landau level (LL) energies, which are formed in a high magnetic field, from the STS data.…”

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confidence: 99%

“…3 Various methods for doping topological insulators have been investigated, such as adding impurities 4 and applying external field by gating. 5 In addition, recent studies showed that it is possible to induce doping by adjusting the composition in Bi-and Sbbased chalcogenides, i.e., varying the composition variables x and y in Bi 2Àx Sb x Te 3Ày Se y . 6,7 In these compounds, the Fermi energy could be located in the bulk band gap, while the topological surface states remained intact.…”

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Local potential fluctuation of topological surface states in Bi1.5Sb0.5Te1.7Se1.3 observed by Landau level spectroscopy

Ko¹,

Park

Jeon³

et al. 2016

Applied Physics Letters

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“…The coexistence of several privileged conditions for applications-fast charge carriers, 31,32 sensitivity to applied fields, 33 reduced fluctuation of mobility, 18 and robustness to disorder 34 -makes TIs promising for technological use in quantum computing, 35 high-speed electronic devices, 36 as well as spintronic devices with novel functionalities. 37 Moreover, the amazing optical properties of TIs [38][39][40][41][42][43][44] allow their versatile and multifunctional use in signal emission, transmission, modulation, and detection.…”

confidence: 99%

Optoelectronic devices, plasmonics, and photonics with topological insulators

2017

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Topological insulators are innovative materials with semiconducting bulk together with surface states forming a Dirac cone, which ensure metallic conduction in the surface plane. Therefore, topological insulators represent an ideal platform for optoelectronics and photonics. The recent progress of science and technology based on topological insulators enables the exploitation of their huge application capabilities. Here, we review the recent achievements of optoelectronics, photonics and plasmonics with topological insulators. Plasmonic devices and photodetectors based on topological insulators in a wide energy range, from Terahertz to the ultraviolet, promise outstanding impact. Furthermore, the peculiarities, the range of applications and the challenges of the emerging fields of topological photonics and thermoplasmonics are discussed.

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Electric-Field Tuning of the Surface Band Structure of Topological InsulatorSb2Te3Thin Films

Cited by 75 publications

References 37 publications

Dirac states with knobs on: Interplay of external parameters and the surface electronic properties of three-dimensional topological insulators

Dirac states with knobs on: Interplay of external parameters and the surface electronic properties of three-dimensional topological insulators

Local potential fluctuation of topological surface states in Bi1.5Sb0.5Te1.7Se1.3 observed by Landau level spectroscopy

Optoelectronic devices, plasmonics, and photonics with topological insulators

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