Electric field tuning of domain magnetic resonances in yttrium iron garnet films

Strong electric field tuning of magnetism in self-biased multiferroic structures

“…reported a resonance frequency at 6 GHz but a bias magnetic field 1700Oe was required to obtain such high frequency 3 . There is also a large tunability 7.8–10.7 GHz in the present work while in Das et al a maximum 40 MHz shift can be achieved by a 9 V bias voltage 2 , in Tatarenko et al a maximum 120 MHz tunability was observed 3 , and another research reported a tunability of 20 MHz 5 . It has been demonstrated that the effective field gradient in layered magnetic structures is essential to achieve large tunability of the heterostructures in this work.…”

“…Each magnetic layer in the proposed structure is designed in a way to display different perpendicular PMA. Surface anisotropy induced PMA gives a high central frequency 2-12 GHz even under zero magnetic bias field, significantly higher than 900 MHz reported in Zavislyak et al 5 , and 0.2 GHz observed in Vukadinovic et al 8 . Tatarenko et al reported a resonance frequency at 6 GHz but a bias magnetic field 1700Oe was required to obtain such high frequency 3 .…”

“…In this work, a multimode tunable heterostructures with magnetic layered configuration is proposed which can achieve three resonance modes compared to maximum two modes in existing work [1][2][3][4][5][6] . Each magnetic layer in the proposed structure is designed in a way to display different perpendicular PMA.…”

“…Until now, considerable efforts have been directed at investigating single layer magnetic film on top of a piezoelectric substrate, such as FeGaB/PZN-PT 1 , BaFe 12 O 19 /Ba 0.5 Sr 0.5 TiO 3 2 , BaFe 12 O 19 /PMN-PT 3 , FeGaB/PZN-PT 4 , YIG/PMN-PT 5 . These experiments observed mainly one significant absorption peak on magnetic materials which can be tuned by applied electric field.…”

Combining ferromagnetic resonator and digital image correlation to study the strain induced resonance tunability in magnetoelectric heterostructures

“…Many ME systems based on ferromagnetic/ferroelectric heterostructures have been developed, encompassing voltage-tunable microwave signal processing devices [3][4][5], magnetoelectric random access memory devices [6][7][8][9] and strain-control GMR devices [10][11][12]. For all these kinds of systems, the properties are controlled via the elastic voltage-induced strains transmitted from the ferroelectric medium to the ferromagnetic one.…”