Electric field induced transitional magnetic coupling in (Ga, Cr)N/GaN magnetic tunnel junctions

Luo, Ming; Shen, Yu

doi:10.1016/j.ijleo.2016.06.080

Cited by 2 publications

(1 citation statement)

References 26 publications

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“…It has received great attention in the study of charge transport in heterostructures due to its application in spintronic devices [1][2][3]. Since the invention of diluted magnetic semiconductors (DMS) by Ohno many researchers have reported that spin polarization in semiconductor heterostructures can be achieved by using a ferromagmetic semiconductor material [4][5][6]. On the other hand, Voskoboynikov et al have proposed that the Rashba spin-orbit coupling can cause a non-magnetic semiconductor material to become a spin filter [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Influence of Incident Angle of Electron on Transmittance and Tunneling Current in Heterostructures with Bias Voltage by Considering Spin Polarization Effect

Noor

Nabila

Sustini

et al. 2017

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. In this work, an analytical expression is presented of electron transmittance through a potential barrier by applying a bias voltage with spin polarization consideration. A zincblende material was employed for the barrier in the heterostructure to calculate the transmittance, which depends on the spin states indicated as "up" and "down". The obtained transmittance was then employed to compute the tunneling current. It was shown that the transmittances are different for each state and asymmetric with incident angle. The polarization is positive for a positive incident angle of and negative for a negative incident angle. It was also shown that the tunneling current did not reach its highest value at an incident angle of 0° (z-direction).

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