Electric field induced second harmonic generation spectroscopy on a metal-oxide-silicon structure

Abstract

Spectroscopic electric-field-induced second harmonic generation on a Si(111)-SiO2-C r metal-oxide-silicon structure shows a bias-independent " interface" resonance at 3.25 eV and a ''bulk'' resonance at 3.43 eV which is strongly bias dependent. The symmetry forbidden bulk dipole contribution becomes observable, and even dominating, due to the bias-induced band-bending that breaks the bulk inversion symmetry. The origin of these resonances is discussed, as well as the prospects for using second harmonic generation as a probe of metal-oxide-silicon characteristics.

dc-electric-field-induced second-harmonic generation in Si(111)-SiO2-Cr metal-oxide-semiconductor structures

“…Therefore, the investigation of the EISH in metal-oxide-semiconductor ͑MOS͒ structures, that was demonstrated in Ref. 18 and recently extended to the planar MOS structures with semitransparent gate electrodes, 19,20 seems very promising.…”

Electric‐field‐induced second‐harmonic microscopy

“…silicon, water), but is locally enhanced in regions pervaded by an electric field E 0 , which, as a polar vector, lifts inversion symmetry. This electric field-induced second-harmonic (EFISH) process, first demonstrated in the 1960s [1], has been widely employed as a probe of electric fields in semiconductor devices [2,3,4,5,6,7] and in aqueous environments [8,9,10]. However, despite extensive development of second-harmonic microscopy in other contexts [11,12,13], the potential of EFISH for diffraction-limited microscopy of electric fields remains largely untapped [14].…”

Probing the silicon-silicon oxide interface of Si(111)SiO2Cr MOS structures by DC-electric-field-induced second harmonic generation

“…[4,5]. Since for electrolytic interfaces the range of field values is restricted by oxidation processes that occur at the silicon surface for anodic potentials, the investigation o f EISHG for m etal-oxide-sem iconductor (M OS) structures seems more promising [6,7]. In this paper we study EISHG in transmission through Si(l 11 ) -S i0 2-C r MOS structures with varying ox ide thickness.…”