Electric-field-induced quenching effect of Raman scattering in Mg-doped p-GaN

Abstract

Articles you may be interested inInGaN metal-semiconductor-metal photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers

Electric-Field-Induced Local Layer Structure in Plasticized PVC Actuator

“…The strain pattern induced by the attractive force from the anode was obtained while the electric field was applied (see Figure b). The reason may be that the PVC gel network was extended by stress, and the distance between the cross-link points increased upon increasing the electric field as represented in the imaging models of Figure c and d. This damping effect of electric-field-induced Raman scattering intensity, with reduction in intensity of spectrum peaks, may be related to phonon−hole scattering due to the strong interaction between the phonons and the photogenerated hole carriers. − The Raman spectra at five positions from the anode to the cathode were definitely different, especially near the anode and cathode. This variation also supports the different deformation behavior from the anode to the cathode due to the electric-field-induced solvent-rich phase moving to the anode.…”

“…This damping effect of electric-field-induced Raman scattering intensity, with reduction in intensity of spectrum peaks, may be related to phonon-hole scattering due to the strong interaction between the phonons and the photogenerated hole carriers. [29][30][31] The Raman spectra at five positions from the anode to the cathode were definitely different, especially near the anode and cathode. This variation also supports the different deformation behavior from the anode to the cathode due to the electricfield-induced solvent-rich phase moving to the anode.…”

Redshift ofA1(longitudinal optical) mode for GaN crystals under strong electric field

“…6) It is believed that hot-phonon decay can be evaluated in terms of the LO phonon lifetime, which determines the hot-phonon effects, i.e., a sufficiently long LO phonon lifetime reduces the rate at which hot electrons lose energy and reduces the carrier mobility. [7][8][9] Electric field-induced Raman scattering, which allows us to probe the changes of the electric fields in space-charge layers at semiconductor surfaces and interfaces, has also been widely used to investigate the LO phonons of GaAs or CdS under a strong electric field (∼10 6 V=m), 10,11) but has been used rarely for GaN. Consequently, exploring the LO phonon property is crucial for understanding GaN, particularly under nonequilibrium conditions.…”

“…where ε 0 is the static dielectric constant (8.854 × 10 −12 F=m); ε S is the relative dielectric constant (10); e is the electron charge (1.602 × 10 −19 C); n can be assumed to be the carrier concentration n H , as shown in Table I; and φ B is the barrier height of the surface potential for n-type GaN, which results from the band bending. The value of φ B for GaN is approximately 0.8 V in darkness, 24) whereas it is approximately 0.4 V under 325-nm laser excitation (specific situations are described below).…”

Raman investigation of electric field induced molecular modifications in organic field effect transistors

“…The induced electronic rearrangement results in induced dipoles. Thus, shifts of the Raman bands, and/or modifications of the modes intensity [9], enhancement or quenching [10], alteration of the normal molecular absorption and distortion are observed. The changes produced by the electric field named electronic or geometric distortions are understood as symmetry breakdown of the molecule [11].…”