Electric field induced parametric excitation of exchange magnons in a CoFeB/MgO junction

Deka, Angshuman; Rana, Bivas; Anami, Ryo; Miura, Katsuya; Takahashi, Hiromasa; Otani, Y.; Fukuma, Yasuhiro

doi:10.1103/physrevresearch.4.023139

Cited by 10 publications

(17 citation statements)

References 45 publications

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“…[ 25 ] In order to avoid any contributions to the rectified voltage lineshape that can arise from nonlinear excitation of magnetization dynamics, we ensured that all our measurements were performed in the linear regime by checking the input power P app dependence of the spectra. [ 30,31 ] As power increases from 0 to 13 dBm,

Δ H

and

H_{0}

remain invariant with power, as shown in Figure S3, Supporting Information. This confirms that V mix is due to the excitation of the uniform FMR mode in this input power range.…”

Section: Resultsmentioning

confidence: 88%

“…This confirms that the difference in resonance fields in STO/AlN/NiFe and STO/ Al 2 O 3 /NiFe samples arises from the different effective demagnetizing fields. [31] When the symmetric component of the ST-FMR spectra is attributed to a y-polarized spin current, σy travelling in the z-direction, the angular dependence of the symmetric amplitude follows a sin2ϕ cosϕ dependence. Simultaneously, due to the flow of an x-axial microwave current in the device, an antisymmetric component is also produced by the corresponding Oersted field, which follows a sin2ϕ cosϕ dependence.…”

Section: Resultsmentioning

confidence: 99%

“…In addition, the H o increases with the frequency, which agrees well with the Kittel equation. Upon fitting to the Kittel equation, [ 31 ] we obtained μ o M eff = 698 mT and 814 mT for the STO/AlN/NiFe and the STO/ Al 2 O 3 /NiFe samples, respectively (see Figure S2, Supporting Information). This confirms that the difference in resonance fields in STO/AlN/NiFe and STO/Al 2 O 3 /NiFe samples arises from the different effective demagnetizing fields.…”

Section: Resultsmentioning

confidence: 99%

“…This confirms that the difference in resonance fields in STO/AlN/NiFe and STO/Al 2 O 3 /NiFe samples arises from the different effective demagnetizing fields. [ 31 ]…”

Section: Resultsmentioning

confidence: 99%

“…Previous studies have indicated that angular-dependent measurement of magnetization dynamics is crucial toward an accurate estimation of magnetic anisotropies and torques. [26,[28][29][30][31] Therefore, we use such an approach to systematically investigate the charge-to-spin conversion efficiency of q-2DEG.…”

Section: Introductionmentioning

confidence: 99%

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Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO₃‐Based Interfaces

Shashank

Deka

Wang

et al. 2022

Physica Rapid Research Ltrs

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Interfacial two-dimensional electron gas (2DEG), especially the SrTiO3-based ones at the unexpected interface of insulators, have emerged to be a promising candidate for efficient charge-spin current interconversion. In this article, to gain insight into the mechanism of the charge-spin current interconversion at the oxide-based 2DEG, we focused on conducting interfaces between insulating SrTiO3 and two types of aluminium-based amorphous insulators, namely SrTiO3/AlN and SrTiO3/Al2O3, and estimated their charge-spin conversion efficiency, 𝜃 . The two types of amorphous insulators were selected to explicitly probe the overlooked contribution of oxygen vacancy to the 𝜃 . We proposed a mechanism to explain results of spintorque ferromagnetic resonance (ST-FMR) measurements and developed an analysis protocol to reliably estimate the 𝜃 of the oxide based 2DEG. The resultant 𝜃 /𝑡 , where 𝑡 is the thickness of the 2DEG, were estimated to be 0.244 nm -1 and 0.101 nm -1 for the SrTiO3/AlN and SrTiO3/Al2O3, respectively, and they are strikingly comparable to their crystalline counterparts. Furthermore, we also observe a large direct current modulation of resonance linewidth in SrTiO3/AlN samples, confirming its high 𝜃 and attesting an oxygen-vacancy-enabled charge-3 spin conversion. Our findings emphasize the defects' contribution to the charge-spin interconversion, especially in the oxide-based low dimensional systems, and provide a way to create and enhance charge-spin interconversion via defect engineering.

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Δ H

and

H_{0}

remain invariant with power, as shown in Figure S3, Supporting Information. This confirms that V mix is due to the excitation of the uniform FMR mode in this input power range.…”

Section: Resultsmentioning

confidence: 88%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…This confirms that the difference in resonance fields in STO/AlN/NiFe and STO/Al 2 O 3 /NiFe samples arises from the different effective demagnetizing fields. [ 31 ]…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO₃‐Based Interfaces

Shashank

Deka

Wang

et al. 2022

Physica Rapid Research Ltrs

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Driving magnetic oscillation by electric flip in Permalloy/BaTiO3 composite

Chen,

He,

Wang

2024

Results in Physics

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Anisotropy of magnetic damping in Ta/CoFeB/MgO heterostructures

Rana

Otani

2023

Sci Rep

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Magnetic damping controls the performance and operational speed of many spintronics devices. Being a tensor quantity, the damping in magnetic thin films often shows anisotropic behavior with the magnetization orientation. Here, we have studied the anisotropy of damping in Ta/CoFeB/MgO heterostructures, deposited on thermally oxidized Si substrates, as a function of the orientation of magnetization. By performing ferromagnetic resonance (FMR) measurements based on spin pumping and inverse spin Hall effect (ISHE), we extract the damping parameter in those films and find that the anisotropy of damping contains four-fold and two-fold anisotropy terms. We infer that four-fold anisotropy originates from two-magnon scattering (TMS). By studying reference Ta/CoFeB/MgO films, deposited on LiNbO3 substrates, we find that the two-fold anisotropy is correlated with in-plane magnetic anisotropy (IMA) of the films, suggesting its origin as the anisotropy in bulk spin–orbit coupling (SOC) of CoFeB film. We conclude that when IMA is very small, it’s correlation with two-fold anisotropy cannot be experimentally identified. However, as IMA increases, it starts to show a correlation with two-fold anisotropy in damping. These results will be beneficial for designing future spintronics devices.

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Electric field induced parametric excitation of exchange magnons in a CoFeB/MgO junction

Cited by 10 publications

References 45 publications

Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO₃‐Based Interfaces

Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO₃‐Based Interfaces

Driving magnetic oscillation by electric flip in Permalloy/BaTiO3 composite

Anisotropy of magnetic damping in Ta/CoFeB/MgO heterostructures

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Electric field induced parametric excitation of exchange magnons in a CoFeB/MgO junction

Cited by 10 publications

References 45 publications

Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO3‐Based Interfaces

Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO3‐Based Interfaces

Driving magnetic oscillation by electric flip in Permalloy/BaTiO3 composite

Anisotropy of magnetic damping in Ta/CoFeB/MgO heterostructures

Contact Info

Product

Resources

About

Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO₃‐Based Interfaces

Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO₃‐Based Interfaces