Electric‐field‐induced optical absorption and refractive‐index changes of a shallow hydrogenic impurity in an InAs/GaAs quantum wire

Abstract

The effect of electric-field strength on the binding energy of a hydrogenic impurity in an InAs/GaAs quantum wire is discussed. Calculations have been performed using Bessel functions as an orthonormal basis within a single-band effective-mass approximation. The electric-field-induced photoionization cross section of the hydrogenic impurity is investigated. The total optical absorption and the refractiveindex changes as a function of normalized photon energy between the ground and the first excited state under the influence of an electric field are analyzed. The optical absorption coefficients and the refractive-index changes strongly depend on the incident optical intensity and the electric-field intensity.1 Introduction A remarkable amount of work is devoted to the study the low-dimensional heterostructures such as quantum wells, quantum-well wires, and quantum dots due to their interesting basic physical properties and the possible potential applications such as in lasers, longwavelength photodetectors, optoelectronic devices, and other devices. The confinement of electrons and holes in these nanostructures modifies the electronic, optical, and vibrational properties of the materials. There has been increasing interest in the study of the electronic and optical properties of quantum-well wires whose dimensions are of nanometer size. In such structures, the electrons are confined to movement along the length of the wire while the motion in dimensions perpendicular to the wire is quantized. The understanding of the electronic and optical properties of impurities in these quantum wires is imperative because the optical, electrical, and transport properties of devices made from these materials will show exotic behavior when the size is reduced to nanodimensions.

Exploring static and frequency-dependent third nonlinear polarizability of doped quantum dots driven by Gaussian white noise

“…The nonlinear effect becomes quite discernible if the quantum system possesses significant asymmetry. Thus, the applied electric field turns out to be highly significant so far as optical properties of doped QDs are concerned .…”

Adiabatic Switching Among Quantum Dot Eigenstates: Role of Anharmonicity and Gaussian White Noise

“…In view of the tremendous applications of LDSSs in microelectronics and optoelectronics, we find a rich literature dealing with LDSSs [ 1–12 ] with special stress on their NLO properties. [ 1,2,7,13–32 ]…”

Profiles of Static Quadrupole Polarizability of Impurity‐Doped Quantum Dots Driven by Gaussian White Noise

“…The tunability increases due to the dependence of optical transition energy on the effective confinement strength . Thus, we can come across a large number of studies that deal with impurity doping in LDSS, showing special interest in nonlinear optical (NLO) properties …”

“…[4] Thus, we can come across a large number of studies that deal with impurity doping in LDSS, [5][6][7][8] showing special interest in nonlinear optical (NLO) properties. [9][10][11][12][13][14][15][16][17][18][19][20][21] Electric field (F) [22][23][24][25][26][27][28][29][30][31][32][33] and magnetic field (B) [24,28,30,[34][35][36][37] are two prominent physical quantities which are well known for providing valuable information on LDSS. The incorporation of F and B, in effect, alters the effective confinement potential of LDSS.…”