Electric Field-Induced Magnetization Switching in Epitaxial Columnar Nanostructures

Zavaliche, F.; Zheng, Haimei; Mohaddes-Ardabili, L.; Yang, So Young; Zhan, Qingfeng; Shafer, Padraic; Reilly, Elizabeth; Chopdekar, Rajesh V.; Jia, Yan; Wright, Philip; Schlom, Darrell G.; Suzuki, Yuri; Ramesh, R.

doi:10.1021/nl051406i

Cited by 429 publications

(342 citation statements)

References 13 publications

(26 reference statements)

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“…In typical ferroelectric materials like the perovskites, the mechanisms leading to ferroelectricity and ferromagnetism even seem to exclude each other: a stable electric polarization arises only in the case of empty d-shells of the transition-metal ions, while partially filled d-shells are responsible for the ferromagnetism [33]. A second group are composite materials in which ferroelectric and ferromagnetic phases are brought into close contact so that electric and magnetic dipoles couple via the interface, driven by elastic [5,34] or electronic effects [8,7]. Especially in laminated multilayer compounds, larger effects are found.…”

Section: Development Of Mec In Insulatorsmentioning

confidence: 99%

Magnetoelectric coupling at metal surfaces

et al. 2010

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Section: Development Of Mec In Insulatorsmentioning

confidence: 99%

Magnetoelectric coupling at metal surfaces

et al. 2010

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“…Whereas advanced techniques such as transmittance optical spectroscopy, 25 x-ray absorption 26 or scattering 27 and magnetic field-dependent piezoresponse force microscopy (PFM) 28 are expected to yield unambiguous results, much discussion has arisen over the more frequently used technique of dielectric spectroscopy, which, in multiferroics research, is often combined with applied magnetic fields. A short introduction into the basic principles of dielectric spectroscopy is given in the supplementary material part I.…”

Section: Introductionmentioning

confidence: 99%

Magnetoimpedance spectroscopy of epitaxial multiferroic thin films

et al. 2012

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The detection of true magnetocapacitance (MC) as a manifestation of magnetoelectric coupling (MEC) in multiferroic materials is a nontrivial task, because pure magnetoresistance (MR) of an extrinsic MaxwellWagner-type dielectric relaxation can lead to changes in capacitance [G. Catalan, Appl. Phys. Lett. 88, 102902 (2006)]. In order to clarify such difficulties involved with dielectric spectroscopy on multiferroic materials, we have simulated the dielectric permittivity ε of two dielectric relaxations in terms of a series of one intrinsic film-type and one extrinsic Maxwell-Wagner-type relaxation. Such a series of two relaxations was represented in the frequency-(f -) and temperature-(T -) dependent notations ε vs f and ε vs T by a circuit model consisting in a series of two ideal resistor-capacitor (RC) elements. Such simulations enabled rationalizing experimental f -, T-, and magnetic field-(H -) dependent dielectric spectroscopy data from multiferroic epitaxial thin films of BiMnO 3 (BMO) and BiFeO 3 (BFO) grown on Nb-doped SrTiO 3 . Concomitantly, the deconvolution of intrinsic film and extrinsic Maxwell-Wagner relaxations in BMO and BFO films was achieved by fitting f -dependent dielectric data to an adequate equivalent circuit model. Analysis of the H -dependent data in the form of determining the H -dependent values of the equivalent circuit resistors and capacitors then yielded the deconvoluted MC and MR values for the separated intrinsic dielectric relaxations in BMO and BFO thin films. Substantial intrinsic MR effects up to 65% in BMO films below the magnetic transition (T C ≈ 100 K) and perceptible intrinsic MEC up to − 1.5% near T C were identified unambiguously.

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“…Nanoscale pillar structures of the magnetic spinel CoFe 2 O 4 embedded in a matrix of the ferroelectric perovskite BiFeO 3 combine a large effective interface area and avoid mechanical clamping to the substrate 126,127 in order to further improve the coupling strength. This structure requires a small magnetic bias to lift the degeneracy between up and down magnetic states and to ensure electric field controlled magnetization switching.…”

Section: Composite Structuresmentioning

confidence: 99%

Multiferroic Materials: Physics and Properties

Palstra

Blake

2016

Reference Module in Materials Science and Materials Engineering

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Multiferroics are materials in which magnetism and ferroelectricity coexist. They are of fundamental interest to understand electronic behavior coupling magnetic interactions and electric dipolar order. Moreover, they are of applied interest because they allow various types of novel magnetic and electric device structures. We distinguish two important classes of multiferroic materials and discuss mechanisms and materials belonging to each class separately. In the first group of multiferroics, magnetization and polarization arise independently from each other. In the second category of multiferroics, ferroelectricity is induced by magnetic order, resulting in strong magnetoelectric coupling. We also briefly discuss multiferroic thin film heterostructures showing interfacial magnetoelectric coupling interactions with potential applications in memory devices

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Electric Field-Induced Magnetization Switching in Epitaxial Columnar Nanostructures

Cited by 429 publications

References 13 publications

Magnetoelectric coupling at metal surfaces

Magnetoelectric coupling at metal surfaces

Magnetoimpedance spectroscopy of epitaxial multiferroic thin films

Multiferroic Materials: Physics and Properties

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