Electric field-induced magnetic changes in La0.7Sr0.3MnO3 thin film using electric field-induced resistance phenomenon

Abstract

We achieved the electrical control of a magnetic state by using an external magnetic field via electric field-induced resistance (EIR) change phenomena. We prepared a La0.7Sr0.3MnO3 (LSMO) film which showed EIR changes. Before the EIR treatment, the sample barely showed negative magnetoresistance (MR). After the EIR treatment, the value of negative MR became six times larger than that before the EIR treatment. The magnetization curves also changed from paramagnetism to superparamagnetism. These behaviors revealed that the EIR treatment changed not only the resistance state but also the magnetic state in LMSO film.

Electrical and magnetoresistive properties of the Ag/La2/3Sr1/3MnO3point-probe contacts

“…Clearly defined XRD lines of the (00l) family (l = 1, 2,…) seen in the figure certify the growth of single phase highly textured material with [100]-axis aligned normal to the film plane. The off-plane lattice constant of a pseudocubic unit cell, a LSMO = 0.3885 nm, has been estimated for the LSMO film in good accordance to recently published data [11,17]. A typical AFM surface image of the LSMO film is displayed in Fig.…”

“…Heterojunctions formed between manganite thin films and typical semiconductors as Si and Nb-doped SrTiO 3 attract interest due to magnetic field-dependent rectifying I-U characteristics and photovoltaic effect [5][6][7][8][9]. Similar heterojunctions formed between conventional metals such as Ag, Au and hole-doped manganites have been investigated due mainly to the electric field-induced resistive switching phenomenon and resistive memory applications [10,11]. However, only few data has been reported till now on interface resistance [12][13][14] although metallic contacts are widely used for various spintronics devices.…”

Proximity-Induced Spin Polarization of Graphene in Contact with Half-Metallic Manganite

“…by controlling the concentration of the interfacial oxygen atoms (see Figure S4). It should be noted that the concentration of the interfacial oxygen atoms can also affect the exchange interaction and magnetism of LSMO in the region near the interface possibly due to the change in the density of itinerant electrons . The similar exchange interactions induced under the electrostatic interfacial interactions can take place not only in other graphene/MO junctions , but also at the first molecular layer of organic molecules in molecule/MO junctions depending on the molecular orbital structure.…”

Reversible oxygen vacancies doping in (La0.7,Sr0.3)MnO3 microbridges by combined self-heating and electromigration

“…Although these solutions offer the chance to conveniently and systematically explore the effects of oxygen stoichiometry on oxide thin films, the exploitation of these capabilities into innovative electronic devices is limited by the impossibility of rapidly and reversibly changing oxygen vacancies concentration over selected regions with low energy consumption. An alternative approach is to apply an electrical current to move oxygen vacancies in stacked [10,11] or planar systems [12]. In the first case, contact interfaces also contribute to the overall resistance, making it difficult to isolate bare bulk effects, while both approaches require conventional thermal annealing of the whole sample to restore the initial conditions.…”