2023
DOI: 10.1039/d3ra00157a
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Electric field engineering and modulation of CuBr: a potential material for optoelectronic device applications

Abstract: I–VII semiconductors are promising candidates for the solid-state optoelectronics may be engineered/tailored by manipulating electronic bandgaps.

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“…[49] As shown in Figure 10e, for CuBr, the Fermi energy level is positioned at the DOS near zero, suggesting that CuBr is semiconducting but metallic. [50] The VB of CuBr is mainly contributed by Cu d and Br i, while the CB is mainly contributed by Cu s. Figure 10f displays the density of states for NENU-5. The DOS of NENU-5 is not zero at the Fermi energy level revealing metallic conducting properties.…”
Section: Dft and Ups Calculationsmentioning
confidence: 99%
“…[49] As shown in Figure 10e, for CuBr, the Fermi energy level is positioned at the DOS near zero, suggesting that CuBr is semiconducting but metallic. [50] The VB of CuBr is mainly contributed by Cu d and Br i, while the CB is mainly contributed by Cu s. Figure 10f displays the density of states for NENU-5. The DOS of NENU-5 is not zero at the Fermi energy level revealing metallic conducting properties.…”
Section: Dft and Ups Calculationsmentioning
confidence: 99%