Electric-field effect on the spin-dependent resonance tunneling

Alekseev, P. S.; Chistyakov, V. M.; Yassievich, I. N.

doi:10.1134/s1063782606120062

Cited by 12 publications

(4 citation statements)

References 9 publications

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“…In summary, we have shown the importance of the contribution from the interfaces, in narrow gap structures, to the spin polarization through the electronic dispersion relations, and how this contribution can be detected by PLE. The model can be extended to the analysis of the negative magnetoresistance [25] as well as peculiarities of the spin current through ADQW [26] …”

Section: Discussionmentioning

confidence: 99%

Abrupt barrier contribution to electron spin splitting in asymmetric coupled double quantum wells

Hernández‐Cabrera

Aceituno

2014

Indian J Phys

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We have studied the behavior of the electronic energy spin-splitting of InGaAs − InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 8 × 8 version of the Transfer Matrix Approach that consider contributions from abrupt interfaces and external fields when tunneling through central barrier exists. We have included the Landé g-factor dependence on the external applied field. Also, we have calculated electron density of states and photoluminescence excitation. Variations of the electron spin-splitting energy lead to marked peculiarities in the density of states.Because the density of states is directly related to photoluminescence excitation, these peculiarities are observable by this technique.

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Section: Discussionmentioning

confidence: 99%

Abrupt barrier contribution to electron spin splitting in asymmetric coupled double quantum wells

Hernández‐Cabrera

Aceituno

2014

Indian J Phys

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“…It was shown that the Rashba spin-orbit coupling at interfaces as well as the Dresselhaus coupling in the bulk of barrier make the barrier tunnel transmission dependent of the spin orientation and wave vector of incident electrons [13][14][15][16]. The effect of spin-dependent tunneling was proposed to be applied for the pure electric injection and detection of spin polarized carriers [17][18][19][20][21][22][23][24][25][26][27][28][29]. In the case of Rashba and Dresselhaus coupling in (001)-grown barriers in bulk semiconductors, the spin polarization of transmitted electrons linearly scales with the lateral component k of the electron wave vector and is of opposite sign for the wave vectors k and −k [13,15].…”

Section: Introductionmentioning

confidence: 99%

Spin injection via (110)-grown semiconductor barriers

2014

Self Cite

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We study the tunneling of conduction electrons through a (110)-oriented single-barrier heterostructure grown from III-V semiconductor compounds. It is shown that, due to low spatial symmetry of such a barrier, the tunneling current through the barrier leads to an electron spin polarization. The inverse effect, generation of a direct tunneling current by spin polarized electrons, is also predicted. We develop the microscopic theory of the effects and show that the spin polarization emerges due to the combined action of the Dresselhaus spin-orbit coupling within the barrier and the Rashba spin-orbit coupling at the barrier interfaces.Comment: 7 pages, 2 figure

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“…[16][17][18][19][20][21] In these studies, carried out mainly for double-barrier semiconductor heterostructures, it is shown that the spin dependence of the tunneling transmission probability, spin polarization efficiency, and delay tunneling time can be controlled effectively by an external electric field. That is, these structures should exhibit electrically controllable spin filtering properties.…”

Section: Introductionmentioning

confidence: 99%

High-speed spin channels in a variably spaced multibarrier structure

Dios-Leyva¹,

Drake-Pérez²

2011

Journal of Applied Physics

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We have studied the spin–dependent transport properties in a variably spaced multibarrier structure (VSMS) formed by layers of two zinc blende semiconductors with a relatively strong Dresselhaus spin−orbit interaction (SOI). The structure is designed such that, in the absence of SOI, the ground-state energies in adjacent quantum wells are resonantly aligned by an external electric field applied perpendicular to the layers, forming then an electron miniband. In the energy range where this spin degenerate miniband is localized, the transmission coefficient shows a resonant structure which splits into two transmission spectra corresponding to spin-up and spin down states in the presence of SOI. In the energy range where these spectra exhibit overlapping, the polarization efficiency is, in general, an oscillating function of energy. These oscillations tend to disappear as the overlap between the spin−splitting transmission spectra decreases. We have identified two energy ranges where the spin−split transmission spectra do not overlap and the polarization efficiency is essentially 100%, indicating that the VSMSs may be explored as spin filtering devices even for unpolarized injection. It was also shown that the appropriate choice and control of the barrier sizes are of significant importance for the possible development of spin filters based on VSMSs.

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Electric-field effect on the spin-dependent resonance tunneling

Cited by 12 publications

References 9 publications

Abrupt barrier contribution to electron spin splitting in asymmetric coupled double quantum wells

Abrupt barrier contribution to electron spin splitting in asymmetric coupled double quantum wells

Spin injection via (110)-grown semiconductor barriers

High-speed spin channels in a variably spaced multibarrier structure

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