Electric field domains in p-Si/SiGe quantum cascade structures

Ikonić, Z.; Harrison, P.; Kelsall, R. W.

doi:10.1109/ted.2005.862498

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…While the theoretical gain from these two types of staircase structure appear quite large, this is only if one assumes that the injection efficiency is unity. In reality when the devices get scaled to larger numbers of periods, domain formation (10(d)) starts to occur [81] and is clearly significantly less than unity. Fig.…”

Section: P-type Sige Quantum Cascade Devicesmentioning

confidence: 99%

The progress towards terahertz quantum cascade lasers on silicon substrates

Paul¹

2010

Laser & Photonics Reviews

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A review is presented of work over the last 10 years which has been aimed at trying to produce a Si-based THz quantum cascade laser. Potential THz applications and present THz sources will be briefly discussed before the materials issues with the Si/SiGe system is discussed. Waveguide designs and waveguide losses will be presented. Experimental measurements of the non-radiative lifetimes for intersubband transitions in Si Ge quantum wells will be presented along with theory explaining the important scattering mechanisms which determine the lifetimes. Examples of p-type Si/SiGe quantum cascade designs with the experimental electroluminescence will be reviewed and examples of n-type Si-based designs will be presented. In the conclusion designs and structures will be discussed with the greatest potential to achieve an electrically pumped Si-based THz laser.

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Section: P-type Sige Quantum Cascade Devicesmentioning

confidence: 99%

The progress towards terahertz quantum cascade lasers on silicon substrates

Paul¹

2010

Laser & Photonics Reviews

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“…For k = 0 the alignment occurs at somewhat different biases, due to subband warping and nonparabolicity. The structure can be considered as a simple prototype quantum cascade laser (QCL) [20], with emission occuring on the diagonal (cross-period) transition HH1→LH1 for biases exceeding the alignment bias, provided it remains free from domain formation [22].…”

Section: Monte Carlo Versus Rate Equationsmentioning

confidence: 99%

On the incoherence of quantum transport in semiconductor heterostructure optoelectronic devices

Harrison

Ikonić

Vukmirović

et al. 2006

2006 International Biennial Baltic Electronics Conference

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This paper compares and contrasts different theoretical approaches with experimental measurements of transport in optoelectronic devices based on semiconductor heterostructures. The Monte Carlo method which makes no a priori assumptions about the carrier distribution in momentum or phase space is compared with less computationally demanding energy-balance rate equation models which assume thermalised carrier distributions. It is shown that the two approaches produce qualitatively similar results for the specific case of hole transport in p-type Si 1−x Ge x /Si superlattices designed for terahertz emission though there are significant differences which originate in the absolute values of the carrier kinetic energy in the plane of the quantum wells. In contrast to this, simulations of electron transport in n-type GaAs/Ga 1−x Al x As terahertz quantum cascade lasers show a more similar behaviour between both theoretical approaches. In addition, the very good comparison with experiment substantiates the incoherent scattering approach which underpins both methods. Further evidence to support the applicability of carrier transport in semiconductor heterostructures at finite temperature being dominated by incoherent scattering, which can be modelled by self-consistent energybalance rate equations, is given by further comparisons with experimental measurements of two other categories of devices namely quantum well infrared photodetectors and quantum dot infrared photodetectors.

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A microscopic model of electron transport in quantum dot infrared photodetectors

Vukmirović

Ikonić

Savić

et al. 2006

Journal of Applied Physics

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A theoretical model describing the electron transport in vertical conductivity quantum dot infrared photodetectors is presented. The carrier wave functions and energy levels were evaluated using the strain dependent eight-band k∙p Hamiltonian and used to calculate all intra- and interperiod transition rates due to interaction with phonons and electromagnetic radiation. The interaction with longitudinal acoustic phonons and electromagnetic radiation was treated perturbatively within the framework of Fermi’s golden rule, while the interaction with longitudinal optical phonons was considered taking into account their strong coupling to electrons. A system of rate equations was then formed, from which the macroscopic device output parameters such as dark current and responsivity, as well as microscopic information about carrier distribution in quantum dots and continuum states, could be extracted. The model has been applied to simulate the dark current, as well as the midinfrared photoresponse in an experimentally realized device [Chen et al., J. Appl. Phys. 89, 4558 (2001)], and a good agreement with experiment has been obtained. Being free from any fitting or phenomenological parameters, the model should be a useful tool in the design and prediction of the characteristics of the existing or other types of quantum dot infrared photodetectors.

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Electric field domains in p-Si/SiGe quantum cascade structures

Cited by 4 publications

References 19 publications

The progress towards terahertz quantum cascade lasers on silicon substrates

The progress towards terahertz quantum cascade lasers on silicon substrates

On the incoherence of quantum transport in semiconductor heterostructure optoelectronic devices

A microscopic model of electron transport in quantum dot infrared photodetectors

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