Electric-field-controlled nonvolatile magnetic switching and resistive change in La0.6Sr0.4MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) heterostructure at room temperature

Abstract

Control over nonvolatile magnetization rotation and resistivity change by an electric field in La0.6Sr0.4MnO3 thin films grown on (011) oriented 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrates are studied. By utilizing an in-plane strain induced by a side ferroelectric switching with pulsed electric fields from −2.5 kV/cm to +5 kV/cm along [011¯], a nonvolatile and reversible 90°-rotation of the magnetic easy-axis is achieved, corresponding to −69.68% and +174.26% magnetization switching along the [100] and [011¯] directions, respectively. The strain induced nonvolatile resistivity change is approximately 3.6% along the [011¯] direction. These findings highlight potential strategies for electric-field-driven spintronic devices.

Manipulation of the Electronic Transport Properties of Charge-Transfer Oxide Thin Films of NdNiO3 Using Static and Electric-Field-Controllable Dynamic Lattice Strain

“…4(c) and a P + r are the in-plane a axis lattice constants of the NNO film for the P || r and P + r states, respectively. Such a large electric-field-induced in-plane tensile strain is approximately 7.4 to 45 times larger than those reported in other perovskite film/PMN-PT heterostructures such as the La 0.5 Ca 0.5 MnO 3 /PIN-PMN-PT(111) [21], La 0.6 Sr 0.4 MnO 3 /PMN-PT(011) [29], and Pr 0.7 (Ca 0.6 Sr 0.4 ) 0.3 MnO 3 /PMN-PT(011) [48]. According to these electric-field-induced out-of-plane and in-plane strains, the Possion ratio of the NNO film is calculated to be 0.43 using δε zz = −2ν/(1 − ν)δε xx [49].…”

“…Perovskite-type binary and ternary ferroelectric (FE) single crystals of (1 -x)Pb(Mg [17][18][19][20] as well as large ferroelectric-domain-switching-induced lattice strains, which can be reversibly, continuously, and quantitatively tuned by simply applying dc or ac electric fields to the FE crystals along the thickness direction. As of now, finely polished (001)-, (011)-, and (111)-cut PMN-xPT and PIN-xPMN-yPT single crystals have been used as substrates to grow a variety of thin films, such as R 1-x A x MnO 3 (R = La, Pr, A = Ca, Sr, Ba) [21][22][23][24][25][26][27][28][29], Co [30,31], BiFeO 3 [32], YBa 2 Cu 3 O 7 [33,34], BaTiO 3 :Yb/Er [35,36], AFe 2 O 4 (A = Co, Ni) [37,38], Fe 3 O 4 [39,40], and Bi 0.94 Pb 0.06 CuSeO [41], so that the lattice strain and the related properties of these films could be in situ modified. Virtually, using this unique method, the intrinsic lattice strain effects of any films grown on FE substrates can be studied without introducing extrinsic effects caused by the variation in oxygen content, thickness of the dead layer, defects, crystallinity, disorder, and so on.…”

Low‐Voltage Magnetoelectric Coupling in Fe0.5Rh0.5/0.68PbMg1/3Nb2/3O3‐0.32PbTiO3 Thin‐Film Heterostructures

“…In contrast, strain mediated approaches are longer range, but have the disadvantage of not breaking time symmetry and hence are used to manipulate the magnetic anisotropy. Compared with the two other approaches, strain in composite heterostructures provides the potential for robust coupling in thick, large-area devices, [18,22,26] and has made this approach more attractive. Numerous studies have explored the potential for magnetoelectric coupling in ferromagnetic/piezoelectric heterostructures including Co / 0.7PbMg 1/3 Nb 2/3 O 3 -0.3PbTiO 3 , [27,28] Co 0.4 Fe 0.4 B 0.2 / 0.7PbMg 1/3 Nb 2/3 O 3 -0.3PbTiO 3 , [19,29] Fe 0.5 Rh 0.5 / 0.72PbMg 1/3 Nb 2/3 O 3 -0.28PbTiO 3 , [22] etc.…”

Strain vs. charge mediated magnetoelectric coupling across the magnetic oxide/ferroelectric interfaces

“…The electronic reconstructions at atomic scales via electric eld induced strain coupled magnetism tuning in manganites, due to changes in electron hopping rates and associated changes in the atomic bond angles and lengths, have been widely studied. 5,[24][25][26][27][28][29] Electric eld induced charge (electron-hole pairs) mediated coupling across FM/FE interfaces also alters the charge carrier concentrations at the FM oxide layers via an accumulation or depletion process depending on the direction of FE polarization. 30 The interfacial magnetism and thus ME coupling can be manipulated through changing the magnetic moments due to the ipping of spin ordering or orbital reconstruction, changing the exchange interactions (resulting in competition between different magnetic phases), and by changing global magnetization (a result of changes in magnetic anisotropy).…”