Electric field control of micromagnetic structure

Логгинов, А. С.; Мешков, Г.; Николаев, А.В.; Pyatakov, A. P.; Shust, V.A.; Zhdanov, A. G.; Zvezdin, A. K.

doi:10.1016/j.jmmm.2006.10.1070

Cited by 30 publications

(28 citation statements)

References 7 publications

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“…The influence of electric field on micromagnetic structure was predicted theoretically in the series of works [5][6][7][8][9]. These theoretical models took into account the so-called inhomogeneous magnetoelectric interaction that gives rise to electric polarization associated with magnetic inhomogeneities.…”

Section: Theoretical Analysis and Discussionmentioning

confidence: 99%

Magnetic domain wall motion triggered by electric field

Pyatakov

Сергеев

Sechin

et al. 2010

J. Phys.: Conf. Ser.

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Section: Theoretical Analysis and Discussionmentioning

confidence: 99%

Magnetic domain wall motion triggered by electric field

Pyatakov

Сергеев

Sechin

et al. 2010

J. Phys.: Conf. Ser.

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“…It is accomplished by the development of theoretical models inquiring into the mechanism of ME interaction. Magnetic materials with broken inverse symmetry, mainly antiferromagnets [3][4][5][6]; composites comprising magnetostrictive and piezoelectric films [7][8][9], exchange-coupled ferromagnetic and antiferromagnetic heterostructures [10,11] magnets with magnetic inhomogeneties [12][13][14] possess with ME properties. As was indicated in Ref.…”

Section: Introductionmentioning

confidence: 99%

“…[21], electric control of micromagnetic structure such as domain walls and vertical Bloch lines was considered in Ref. [14].…”

Section: Introductionmentioning

confidence: 99%

Peculiarities of electric polarization in bi-layered longitudinally magnetized ferrromagnetic film

Gareeva

Doroshenko

Shul’ga

et al. 2009

Journal of Magnetism and Magnetic Materials

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“…In this case, one should expect an opposite behavior of the magnitude of the effect as a function of the tip-domain wall distance, because a displacement of the wall toward the needle would bring the neighboring domain into the region of high electric field strength as well. The fact that the needle selectively acts on the domain walls suggests that the phenomenon observed is a manifestation of the inhomogeneous magnetoelectric effect related to micromagnetic inhomogeneities of the material [11,20].…”

mentioning

confidence: 99%

“…Despite the fact that all the features of the effect testify that the observed phenomenon is caused by the inhomogeneous magnetoelectric interaction in the ferrite garnet material [11,20], we cannot completely exclude the mechanism determined by the local anisotropy variation due to mechanical stress associated with the piezoelectric effect. To distinguish between these mechanisms with better accuracy, additional studies are necessary, for example, the study of the effect as a function of the characteristic size of micromagnetic inhomogeneities and dependence on the direction of the electric field.…”

mentioning

confidence: 99%

Magnetoelectric control of domain walls in a ferrite garnet film

et al. 2007

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The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field (the direction of wall displacement changes with the polarity of the voltage) and even with respect to the magnetization in domains. The inhomogeneous magnetoelectric interaction as a possible mechanism of the effect is proposed. DOI: 10.1134/S0021364007140093The last few years marked the great progress in the field of magnetoelectric materials [1][2][3]. The newly discovered ferroelectricity induced by spiral magnetic ordering [3][4][5][6][7] and early discovered inverse effects of electrically induced spin modulation [8-10] not only provide a deeper insight into the mechanisms of magnetoelectric coupling (the so-called inhomogeneous magnetoelectric interaction [9][10][11]) but also map out the route for electric control of micromagnetic structure in solids, the possibility predicted in 1980-ies [11] and still not realized.The best candidates for the specific character of micromagnetism in magnetoelectric materials are thin films of ferrite garnets. From the one hand they are classical object to study micromagnetism, [12][13][14][15] from the other hand they exhibit a magnetoelectric effect that is an order of magnitude greater than the corresponding effect in the classical Cr 2 O 3 magnetoelectric [16]. Electromagneto-optical effects on local areas of a ferrite-garnet film revealed that effect is vanishingly small in a homogeneously magnetized film but it increases drastically in the vicinity of domain walls. This effect was attributed to "breathing" of domain wall in electric field providing indirect evidence for the influence of electric field on micromagnetic structure [17].In this Letter we report on the direct magnetooptical observation of a new manifestation of the magnetoelectric effect, namely, the electric-field-control displacement of domain walls in ferrite garnet films, that is of interest from the fundamental point of view and opens up new possibilities for the development of multipurpose spintronic and magnetophotonic devices on a single material platform.In our experiments we used the 9.7-μm-thick epitaxial (BiLu) 3 (FeGa) 5 O 12 ferrite garnet films grown on a Gd 3 Ga 5 O 12 substrate with the (210) crystallographic orientation. The substrate thickness was about 0.5 mm. The period of the strip domain structure was 34.5μm, and the saturation magnetization was 4πMs= 53.5G. To produce a high-strength electric field in the dielectric ferrite garnet film, we used a 50μm-diameter copper wire with a pointed tip, which

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Electric field control of micromagnetic structure

Cited by 30 publications

References 7 publications

Magnetic domain wall motion triggered by electric field

Magnetic domain wall motion triggered by electric field

Peculiarities of electric polarization in bi-layered longitudinally magnetized ferrromagnetic film

Magnetoelectric control of domain walls in a ferrite garnet film

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