Electric Field Control of Magnetization Reversal and Multiple Magnetic States in a Doubly Exchange-Biased Co/IrMn Bilayer

Abstract

Electric field (E-field) control of magnetism, especially for magnetization reversal, is essential for the design of energyefficient spintronic devices. Here, a simple way of E-field control of magnetization reversal is proposed and accomplished on a doubly exchange-biased Co/IrMn bilayer with two collinear but opposite pinning directions. The sample was grown on a ferroelectric (FE) single crystalline (011)-oriented [Pb(Mg 1/3 Nb 2/3 )O 3 ] 0.68 -[PbTiO 3 ] 0.32 (PMN−PT) substrate, which has anisotropic and significant remanent strain. During film deposition, a specially designed magnetic field is produced by two identical "North" poles facing each other along the [01−1] axis, on which the PMN−PT demonstrates tensile strain. Moreover, E-field control of multiple magnetic states could also be realized in this unique doubly exchange-biased system. This work will provide a valuable reference for manufacturing low-energy magnetic storage memory devices