Electric field control of magnetism in multiferroic heterostructures

Vaz, C. A. F.

doi:10.1088/0953-8984/24/33/333201

Cited by 399 publications

(342 citation statements)

References 615 publications

(822 reference statements)

Supporting

Mentioning

335

Contrasting

Unclassified

Order By: Relevance

Section: Introductionmentioning

confidence: 99%

“…the converse magnetoelectric (ME) effect, has become a central issue in the fields of spintronics and multiferroics [1][2][3][4][5][6][7][8][9][10]. It can provide a fast and extremely energy-efficient way for modulating magnetism compared with the traditional way of using external magnetic fields or spin currents [11], and has thus tremendous potential in future low-power and [ [51][52][53][54][55] (for details, see comprehensive review [10]). Compared with the strains which can normally be sustained throughout the heterostructure [5][6][7][8], such charge-driven ME effects can only occur at the heterointerface ranging from the first few atomic layers to several nanometres (normally less than 10 nm) depending on the charge screening length of a specific magnetic film [9,10].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

Shu

et al. 2014

Phil. Trans. R. Soc. A.

View full text Add to dashboard Cite

The electric-voltage-modulated magnetism in multiferroic heterostructures, also known as the converse magnetoelectric (ME) coupling, has drawn increasing research interest recently owing to its great potential applications in future low-power, high-speed electronic and/or spintronic devices, such as magnetic memory and computer logic. In this article, based on combined theoretical analysis and experimental demonstration, we investigate the film size dependence of such converse ME coupling in multiferroic magnetic/ferroelectric heterostructures, as well as exploring the interaction between two relating coupling mechanisms that are the interfacial strain and possibly the charge effects. We also briefly discuss some issues for the next step and describe new device prototypes that can be enabled by this technology.

show abstract

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

Shu

et al. 2014

Phil. Trans. R. Soc. A.

View full text Add to dashboard Cite

show abstract

“…128,130 The exchange bias effect, as shown in Figure 8(b), mediates interfacial coupling via inter-layer exchange interactions in a bilayer system of a ferromagnet and antiferromagnet, in which the uncompensated spins of the antiferromagnet are coupled to the ferromagnetic layer. Polarization biases the orientation of the ferromagnet and causes the M-H hysteresis loop to shift horizontally.…”

Section: Interfacial Magnetoelectric Coupling With Electronic Effectsmentioning

confidence: 99%

“…Therefore, the screening interactions at the interface become spin-dependent, affecting locally the surface magnetization and the magnetic anisotropy. 133 For a detailed review of more interfacial electronic coupling effects we refer the reader to 125,128,130 and references therein.…”

Section: Interfacial Magnetoelectric Coupling With Electronic Effectsmentioning

confidence: 99%

Multiferroic Materials: Physics and Properties

Palstra

Blake

2016

Reference Module in Materials Science and Materials Engineering

View full text Add to dashboard Cite

Multiferroics are materials in which magnetism and ferroelectricity coexist. They are of fundamental interest to understand electronic behavior coupling magnetic interactions and electric dipolar order. Moreover, they are of applied interest because they allow various types of novel magnetic and electric device structures. We distinguish two important classes of multiferroic materials and discuss mechanisms and materials belonging to each class separately. In the first group of multiferroics, magnetization and polarization arise independently from each other. In the second category of multiferroics, ferroelectricity is induced by magnetic order, resulting in strong magnetoelectric coupling. We also briefly discuss multiferroic thin film heterostructures showing interfacial magnetoelectric coupling interactions with potential applications in memory devices

show abstract

“…Coupling at the interface between the layers can occur by various mechanisms, including charge and strain transfer, which are sensitive to local microstructure, chemistry, and defects [2]. The performance of devices for applications such as spin valves and tunnel junctions hinges on quantifying and controlling the local features that mediate coupling.…”

mentioning

confidence: 99%

Evidence for a Thickness-Dependent Crossover from Charge- to Strain-Mediated Magnetoelectric Coupling in La0.7Sr0.3MnO3 / PbZr0.2Ti0.8O3 Thin Film Oxide Heterostructures

Spurgeon¹,

Sloppy²,

Winkler³

et al. 2013

Microsc Microanal

View full text Add to dashboard Cite

Layered magnetoelectric thin film materials, which exhibit coupling between ferroelectric polarization and magnetization, have received considerable attention for use in a new generation of "spintronic" memories [1]. Coupling at the interface between the layers can occur by various mechanisms, including charge and strain transfer, which are sensitive to local microstructure, chemistry, and defects [2]. The performance of devices for applications such as spin valves and tunnel junctions hinges on quantifying and controlling the local features that mediate coupling.Here we present a comprehensive structural, chemical, and magnetic analysis of LSMO / PZT / LSMO and LSMO / PZT/ SrRuO 3 (SRO) thin film heterostructures in significantly different charge and strain states. Scanning transmission electron microscopy (STEM) and geometric phase analysis (GPA) are used to directly map local strain, while electron energy loss spectroscopy (EELS) is used to explore valence changes at the LSMO / PZT interface. These results are complemented by depth-resolved polarized neutron reflectometry (PNR) measurements that provide information about the spatial dependence of magnetization [3]. These experimental observations are combined with phenomenological models and first-principles density functional calculations, which reveal the role of local elastic strains on the electronic distribution, to understand the suppression in the LSMO Curie temperature (T C ). Figure 1 shows local strain gradients measured by GPA. It is clear that there is a significant gradient in strain that depends on the thickness of the PZT underlayer. This gradient reaches a maximum near the vacuum surface, where neutron results show the magnetization is most suppressed. Likewise, STEM high-angle annular dark field (HAADF) images and electron energy loss spectroscopy (EELS) shown in figure 2 reveal changes in PZT polarization and an induced change in Mn valence near the interface. This is associated with an interfacial magnetization measured in PNR. From the magnitude of the induced magnetization changes we find local strain dominates coupling beyond the ultrathin (~4 nm) limit of LSMO. This suggests that layer thickness is crucial parameter in determining device performance and we offer ways to tune the geometry of these structures to favor a particular coupling mode.

show abstract

Electric field control of magnetism in multiferroic heterostructures

Cited by 399 publications

References 615 publications

Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

Film size-dependent voltage-modulated magnetism in multiferroic heterostructures

Multiferroic Materials: Physics and Properties

Evidence for a Thickness-Dependent Crossover from Charge- to Strain-Mediated Magnetoelectric Coupling in La0.7Sr0.3MnO3 / PbZr0.2Ti0.8O3 Thin Film Oxide Heterostructures

Contact Info

Product

Resources

About