Electric field and temperature dependence of hole quantum yield in dibenzothiophene single crystals

Abstract

The electric field and temperature dependence of hole quantum yield in dibenzothiophene single crystals are investigated, using transient techniques. A hole quantum yield of 4.5 × 10−5 carrier/quantum near room temperature is obtained for a field of 1.5 × 104V/cm. This low value is attributed in part to a low efficiency of carrier production and in part to a very fast recombination process between geminate pairs, on the basis of the Onsager theory of the initial recombination of ions.