Electric double layer gate controlled non-linear transport in a nanostructured functional perovskite oxide film

Nath, Rajib; Raychaudhuri, A. K.

doi:10.1063/1.4867081

Cited by 9 publications

(19 citation statements)

References 15 publications

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“…Nath et al investigated the control of non-linear drainsource current I DS through fabricating p-type manganite transistor gated with ionic liquids [74]. The non-linear phenomenon in transport is strongly influenced by the depletion layer of the grain boundary (GB) region.…”

Section: Other Phenomena In Perovskite-based Edltsmentioning

confidence: 99%

Electric double-layer transistors: a review of recent progress

2015

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With the miniaturization of electronic devices, it is essential to achieve higher carrier density and lower operation voltage in field-effect transistors (FETs). However, this is a great challenge in conventional FETs owing to the low capacitance and electric breakdown of gate dielectrics. Recently, electric double-layer technology with ultra-high charge-carrier accumulation at the semiconductor channel/electrolyte interface has been creatively introduced into transistors to overcome this problem. Some interesting electrical transport characteristics such as superconductivity, metal-insulator transition, and tunable thermoelectric behavior have been modulated both theoretically and experimentally in electric double-layer transistors (EDLTs) with various semiconductor channel layers and electrolyte materials. The present article is a review of the recent progress in the EDLTs and the impacts of EDLT technology on modulating the charge transportation of various electronics.

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Section: Other Phenomena In Perovskite-based Edltsmentioning

confidence: 99%

Electric double-layer transistors: a review of recent progress

2015

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“…11 An atomic force microscopy image of the lm (shown in Fig. The device was fabricated with a thin lm channel (with an effective length of 1 mm and width of 300 mm) of La 0.85 Ca 0.15 MnO 3 on a SiO 2 (300 nm)/Si substrate using a stoichiometric target.…”

Section: Methodsmentioning

confidence: 99%

“…The device was fabricated with a thin lm channel (with an effective length of 1 mm and width of 300 mm) of La 0.85 Ca 0.15 MnO 3 on a SiO 2 (300 nm)/Si substrate using a stoichiometric target. 11 The source (s) and drain (d) contact pads were made using thermally evaporated Au/Ti. 11 An atomic force microscopy image of the lm (shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…In a recent paper, 11 we have shown that a gate with an EDL dielectric can control the depletion layer in the GB regions. We have chosen the SiO 2 /Si substrate to make the lm nanostructured.…”

Section: Introductionmentioning

confidence: 99%

“…[5][6][7] This induced surface charge density is orders of magnitude larger than that induced by conventional oxide gate insulators such as SiO 2 or SrTiO 3 for the same bias. 11 The advantage of the FE-induced carrier modulation is that it overcomes the collateral problem of disorder that accompanies carrier modulation via chemical substitution. The native carrier density is very high in the case of transition metal oxides.…”

Section: Introductionmentioning

confidence: 99%

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Control of co-existing phases and charge transport in a nanostructured manganite film by field effects with an electric double layer as the gate dielectric

Nath

Raychaudhuri

2015

RSC Adv.

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We report bipolar control of co-existing phases in a nanostructured film of manganite, La 0.85 Ca 0.15 MnO 3 , using an applied gate bias in a field effect (FE) device configuration. Low hole-doped manganite La 0.85 Ca 0.15 MnO 3 shows the co-existence of different electronic phases and a ferromagnetic insulating (FMI) state at low temperatures. The FE device with manganite as the channel uses an electric double layer (EDL) as a gate dielectric which can induce a large specific charge density ($10 13 cm À2 ) in the channel when a moderate gate bias is applied. The nanostructured nature of the manganite film enhances the field effect by controlling transport within the nano-grain as well as by controlling the depletion layer and the potential barrier at the grain boundaries. We observed a large modulation in the resistance of the film, $AE40%, at room temperature for a moderate gate bias (V G ) of AE4 V, which increased to $AE100% at 100 K. The field-effect-induced charges alter the relative fraction of the coexisting phases as well as the characteristic temperatures, such as the orthorhombic-orthorhombic (O-O 0 ) transition temperature, the ferromagnetic transition temperature, and the onset temperature of the low temperature FMI state. The change in the relative fraction of the phases was found to have an exponential dependence on the gate bias. By using the shift in the temperature of the O-O 0 transition with gate bias as a reference, we could establish that the change in hole concentration, brought about by the field effect, closely mimics (quantitatively) the changes brought about via chemical substitution, including the change in the activation energy of transport in the paramagnetic insulating region. Fig. 9 Field dependence of the scaled f(V,T)/f 0 with respect to V G /V 0 . The inset shows the T dependence of V 0 (T). This journal is

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