Electric discharge CO<sub>2</sub>laser with a large radiating aperture

Аполлонов, В. В.; Akhunov, N.; Minenkov, V. R.; Pel'tsman, S. S.; Prokhorov, A M; Semkin, B. V.; Firsov, K N; Shubin, B. G.

doi:10.1070/qe1984v014n06abeh005182

Cited by 4 publications

(6 citation statements)

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“…16 4. a volume discharge between a semiconductor cathode ͑carbon-filled rubber with a bulk resistivity 17 ͒ and a grid ͑discharge gap cathode͒ initiated without preionization 18 5. a multichannel discharge on the surface of a highpermittivity insulator limited by the insulator capacitance 19 6. a multichannel discharge on the surface of a semiconductor ͑carbon-filled rubber 17 ͒ limited by semiconductor resistance. ͑This auxiliary discharge was realized in the same way as a multichannel discharge on the surface of a ceramic, as described in Ref.…”

Section: Methodsmentioning

confidence: 99%

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High-power self-controlled volume-discharge-based molecular lasers

Аполлонов

2004

Opt. Eng

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An investigation is made of the characteristics of the formation of a self-controlled volume discharge for pumping CO 2 lasers, i.e., self-sustained volume discharge (SSVD), which involves the preliminary filling of a discharge gap by an electron flux from an auxiliary discharge plasma. It is determined that this method is suitable for large interelectrode gaps, that distortion of the electric field in the gap by the space charge of the electron flux plays an important role in the formation of the discharge, that the electrodes could be profiled dynamically during propagation of an electron flux through the discharge gap, and a SSVD could form in systems with a strongly inhomogeneous field. High-power SSVD-based CO 2 laser systems are created and investigated. Another type of self-controlled volume discharge without preionization, i.e., a selfinitiated volume discharge (SIVD), in nonchain HF lasers with SF 6 -C 2 H 6 mixtures is also investigated. It is established that, after the primary local electrical breakdown of the discharge gap, the SIVD spreads along the gap in directions perpendicular to that of the electric field by means of the successive formation of overlapping diffuse channels under a discharge voltage close to its quasi-steady-state value. As new channels appear, the current that flows through the channels formed earlier decreases. The volume occupied by the SIVD increases when the energy deposited in the plasma increases, and, when the discharge volume is confined by a dielectric surface, the discharge voltage increases simultaneously when the current increases. The possible mechanisms that explain the observed phenomena, namely the dissociation and electron attachment of SF 6 molecules, are examined. A simple analytical model is developed that makes it possible to describe these mechanisms at a qualitative level. High-power SIVD-based HF(DF) lasers are developed and tested.

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Section: Methodsmentioning

confidence: 99%

“…͑This auxiliary discharge was realized in the same way as a multichannel discharge on the surface of a ceramic, as described in Ref. 19.͒…”

Section: Methodsmentioning

confidence: 99%

High-power self-controlled volume-discharge-based molecular lasers

Аполлонов

2004

Opt. Eng

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“…The auxiliary discharge was a multichannel discharge on the surface of a ceramic (with the permittivity -2000), limited by the capacitance of the ceramic itself [19]. The shape of U (t) was set by the parameters of a special RC circuit.…”

Section: Discussionmentioning

confidence: 99%

“…(5) A multichannel discharge on the surface of a high-permittivity insulator limited by the insulator capacitance [19] (6) A multichannel discharge on the surface of a semiconductor (carbon-¯lledrubbe [17]) limited by the semiconductor resistance (this auxiliary discharge was realized in the same way as a multichannel discharge on the surface of a ceramic described in Ref. [19]). In all these auxiliary discharges, an electric¯eld was applied to auxiliary discharge plasma.…”

Section: Methodsmentioning

confidence: 99%

“…(4) A volume discharge between a semiconductor cathode (carbon-¯lled rubber with a bulk resistivity [17] and a grid (discharge gap cathode) initiated without preionization [18]. (5) A multichannel discharge on the surface of a high-permittivity insulator limited by the insulator capacitance [19] (6) A multichannel discharge on the surface of a semiconductor (carbon-¯lledrubbe [17]) limited by the semiconductor resistance (this auxiliary discharge was realized in the same way as a multichannel discharge on the surface of a ceramic described in Ref. [19]).…”

Section: Methodsmentioning

confidence: 99%

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High power self-controled volume discharge based molecular lasers

Аполлонов¹

2003

Open Physics

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An investigation was made of the characteristics of the formation of a selfcontroled volume discharge for the pumping of CO 2 lasers, i.e. self-sustained volume discharge (SSVD), which involved a preliminary lling of a discharge gap by an electron ®ux from an auxiliary-discharge plasma. We have found that this method was suitable for large interelectrode gaps, that distortion of the electric eld in the gap by the space charge of the electron ®ux played an important role in the formation of the discharge and that the electrodes could be pro led dynamically during propagation of an electron ®ux through the discharge gap and a SSVD could form in systems with a strongly inhomogeneous eld. High power SSVD based CO2 laser systems have been created and investigated. Another type of self-controled volume discharge without pre-ionization, i.e. a selfinitiated volume discharge (SIVD), in nonchain HF lasers with SF 6 -C 2 H 6 mixtures was investigated as well in our review. We have established that, after the primary local electrical breakdown of the discharge gap, the SIVD spreads along the gap in directions perpendicular to that of the electric eld by means of the successive formation of overlapping di¬use channels under a discharge voltage close to its quasi-steady state value. It is shown that, as new channels appear, the current ®owing through the channels formed earlier decreases. The volume occupied by the SIVD increases with increase in the energy deposited in the plasma and, when the discharge volume is con ned by a dielectric surface, the discharge voltage increases simultaneously with increase in the current. The possible mechanisms which explain the observed phenomena, namely the dissociation of SF 6 molecules and electron attachment SF 6 molecules, are examined. A simple analytical model, which makes it possible to describe these mechanisms at a qualitative level, was developed. High power SIVD based HF(DF) lasers have been developed and tested. c ® Central European Science Journals. All rights reserved.Keywords: Lasers, plasma, discharge PACS: 42.55. Ks, 52.80

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