Elasto-thermodiffusive (ETNP) surface waves in semiconductor materials

Sharma, J. N.; Thakur, Naveen; Singh, Surinder

doi:10.1016/j.ijsolstr.2009.01.019

Cited by 4 publications

(3 citation statements)

References 25 publications

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“…In [Sharma et al 2007] it was found that the age of carrier fields also effects wave propagation in semiconductor materials. In [Sharma et al 2009] it was observed that semiconductor materials exhibit more internal friction with the age of the carrier fields than that of thermal relaxation time. In [Sharma and Pal 2004] the Lamb wave propagation in a transversely isotropic piezothermoelastic plate was investigated.…”

Section: Introductionmentioning

confidence: 99%

Modelling of acoustodiffusive surface waves in piezoelectric-semiconductor composite structures

Sharma

Kumar

2011

J. Mech. Mater. Struct.

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We investigate the propagation of interfacial surface waves in a composite consisting of homogeneous isotropic semiconductor halfspace coated with a thin layer of homogeneous, transversely isotropic, piezoelectric material. The mathematical model of the problem consists of a coupled system of partial differential equations of motion, diffusion of electrons, and a Gauss equation along with the boundary conditions to be satisfied at the interface and free surface of the composite structure.The secular equation that governs the wave propagation at the interface has been obtained in compact form after solving the mathematical model analytically. The secular equations in the case of stressfree, isoconcentrated and stress-free, impermeable semiconductor halfspaces have also been deduced as special cases. The complex secular equation has been solved using the functional iteration method along with the irreducible Cardano's method via MATLAB programming for CdSe-Si, CdSe-Ge, PZT-Si and PZT-Ge composite structures.The computer-simulated results have been presented graphically in terms of phase velocity, attenuation coefficient, and specific loss factor of energy dissipation versus wave number and lifetime of charge carrier field in the considered structures. The work may be useful for the construction and design of surface acoustic wave devices.

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Section: Introductionmentioning

confidence: 99%

Modelling of acoustodiffusive surface waves in piezoelectric-semiconductor composite structures

Sharma

Kumar

2011

J. Mech. Mater. Struct.

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“…Sharma and Thakur (2006) studied the plane harmonic elasto-thermodiffusive waves in semiconductor materials. Sharma et al ( , 2009) also investigated the characteristics of elasto-thermodiffusive wave propagation on semiconductor materials and observed that life time of charge carriers and thermal relaxation time affects the wave characteristics significantly at long wavelengths as compared to that at short wavelengths. Sharma et al (2008) investigated the elasto-thermodiffusive surface waves in a semiconductor halfspace underlying a fluid with varying temperature.…”

Section: Introductionmentioning

confidence: 99%

Surface Wave Characteristics at the Interface of Welded Elastic Halfspaces

Sharma¹,

Sharma²,

Kumar³

2011

OJA

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The present article concentrates on the propagation of generalized surface acoustic waves in a composite struc- ture consisting of piezoelectric and non-piezoelectric semiconductor media. The mathematical model of the problem is depicted by a set of partial differential equations of motion, Gauss equation in piezoelectric and elec- tron diffusion equation in semiconductor along with boundary conditions to be satisfied at the interface. The secular equation that governs the propagation of surface waves has been derived in compact form after obtaining the formal solution. The analytic expressions for displacements, stresses, piezoelectric potential and electron concentration during the surface wave propagation at the interface have also been obtained. The numerical solu- tion of the secular equation is carried out for the cadmium selenide and silicon composite by employing fixed point functional iteration numerical method along with irreducible Cardano method. The computer simulated results with the help of MATLAB software in respect of dispersion curves, attenuation coefficient, displace- ments, stresses, carrier concentration and piezoelectric potential are presented graphically. This work may be useful in surface acoustic wave (SAW) devices and electronic industry

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“…According to the frequency equation, four coupled longitudinal waves, namely quasi-thermoelastic (QTN), elastodiffusive (QEN/QEP), thermodiffusive (QTN/QTP) and quasi-thermal (T-mode) can be propagated in an infinite semiconductor. Sharma et al ( , 2009) also investigated the elasto-thermodiffusive wave propagation on semiconductor materials and observed that the life time of charge carriers and thermal relaxation time affect the wave characteristics significantly. It has been observed that at long wavelengths, the material exhibit more internal friction with increasing life time of charge carrier field.…”

Section: Introductionmentioning

confidence: 99%

Surface waves in a piezoelectric–semiconductor composite structure

Sharma¹,

Sharma²,

Kumar³

2010

International Journal of Solids and Structures

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a b s t r a c tThe present work deals with the propagation of interfacial surface waves in a composite consisting of homogeneous, transversely isotropic, piezoelectric halfspace underlying a thin layer of non-piezoelectric semiconductor material. The mathematical model of the problem is depicted by partial differential equations of motion for the structure and boundary conditions to be satisfied at the interface and free surface of the composite. After obtaining formal wave solution of the model the secular equation that governs the propagation of surface waves in the considered composite structure has been derived in compact form. The numerical solution of secular equation is being carried out for the composites Si-CdSe, Ge-CdSe and Ge-PZT by employing functional iteration method along with irreducible Cardano method using MATLAB programming. The computer simulated results in respect of dispersion curves, attenuation coefficient and specific loss factor of energy dissipation are presented graphically for Si-CdSe composite to illustrate the analytical developments. We have extended our analysis to Ge-CdSe and Ge-PZT composites also. However, to avoid clustering of profiles and also to have clear understanding of the variations, the computer simulated values of phase velocity and attenuation coefficient are presented in tabular form for all three considered composite structures. This work may be useful for designing and construction of surface acoustic wave (SAW) devices and electronics industry.

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Elasto-thermodiffusive (ETNP) surface waves in semiconductor materials

Cited by 4 publications

References 25 publications

Modelling of acoustodiffusive surface waves in piezoelectric-semiconductor composite structures

Modelling of acoustodiffusive surface waves in piezoelectric-semiconductor composite structures

Surface Wave Characteristics at the Interface of Welded Elastic Halfspaces

Surface waves in a piezoelectric–semiconductor composite structure

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