Elastic strains in GaAs/AlAs quantum dots studied by high-resolution x-ray diffraction

Abstract

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Shear strains in dry etched GaAs/AlAs wires studied by high resolution x-ray reciprocal space mapping

“…In principle, the full information about the geometrical shape ͑height, width, inclination of the sidewalls, period͒ as well as about the structural quality ͑strain and crystalline damage͒ can be obtained from a two-dimensional map of reciprocal space. [8][9][10][11] Figure 1͑a͒ shows a reciprocal space map around the ͑004͒ reciprocal lattice point ͑RLP͒ of an unstructured ͑as grown͒ GaAs/AlAs reference sample from the same wafer. ''S'' denotes the GaAs substrate peak, ''SL 0 '' and ''SL 1 '' the zero and first-order MQW peak, respectively.…”

“…The latter allows to quantify the influence of defects introduced in the remaining crystal lattice by the etching process. 11 When the sample is rotated by 90°, the 350 nm periodicity comes into diffraction. The corresponding reciprocal space map can be seen in Fig.…”

“…For asymmetric reflections ͑h,k 0͒, a lateral strain xx induces a shift of the envelope of the wire satellites. 11 The vertical strain zz influences only the q z direction for a rectangular wire, which is eliminated by integration in q z direction to gain a higher signal-to-noise ratio in the measured curve. Hence, it is only the shear strain xz which remains to be considered.…”

Si Based Nanostructure Growth Subsystem with Atomic Scale Control. Supersonic Molecular Beam Array Cell

“…Both the geometry of the structures and lattice strains can be quantified through the analysis of these satellite peaks [15][16][17]. The presence of strain in the periodic features introduces a shift in the diffraction envelope from 12-27-00;11:44 ; ONR SAN DIEGO i8586776480 these features; this displacement can be observed using asymmetric reflection geometry, and can be quantified and converted to a strain matrix [18,19]. We have extended the application of reciprocal space mapping of in-plane modulated structures to study processing issues associated with nanostructured materials.…”

Comparison of multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity

“…Two main techniques are used to study the strain contributions in nanostructures. These are X-ray diffractometry [24][25][26] and photomodulated reflectivity [27][28][29][30] and both reveal that, in most cases, a relaxation towards a freestanding structure takes place in quantum dots and quantum wires. The damage induced by the nanofabrication process has been investigated by time-resolved and contin-uous wave photoluminescence spectroscopy [31][32][33] and Raman spectroscopy of phonons [34].…”