Elastic recoil detection

Bik, W. M. Arnold; Habraken, F.H.P.M.

doi:10.1088/0034-4885/56/7/002

Cited by 141 publications

(37 citation statements)

References 69 publications

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“…For brittle substrate material, special care has to be taken in order not to break the specimen. When the clamps are holding the pieces together, the grid is placed on Al foil, covered with a 3:1 powder mixture of an epoxy resin and carbon, and put on a heating plate (180 • C for 2 hours) for melting the powder and harden the glue.…”

Section: Step 1 -The Sandwich Methodsmentioning

confidence: 99%

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Growth and Characterization of Amorphous Multicomponent Nitride Thin Films

Fager¹

2014

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This thesis explores deposition of amorphous thin films based on the two transition metal nitride systems, TiN and HfN. Additions of Si, Al and B have been investigated using three different deposition techniques: dc magnetron sputtering, cathodic arc evaporation, and high power impulse magnetron sputtering (HIPIMS). The effect of elemental composition, bonding structure, growth temperature, and low-energy ion bombardment during growth has been investigated and correlated to the resulting microstructure and mechanical properties of the films. The thermal stability has been investigated by annealing experiments. Deposition by cathodic arc evaporation yields dense and homogeneous coatings with essentially fully electron-diffraction amorphous structures with additions of either Al+Si, B+Si or B+Al+Si to TiN. The B-containing coatings have unusually few macroparticles. Annealing experiments show that Ti-Al-Si-N coatings have an age hardening behavior, which is not as clear for B-containing coatings. Compositional layering, due to rotation of the sample fixture during deposition, is present but not always visible in the as-deposited state. The layering acts as a template for renucleation during annealing. The coatings recrystallize by growth of TiN-rich domains. Amorphous growth by conventional dc magnetron sputtering is possible over a wide range of compositions for Ti-B-Si-N thin films. The Ti content in the films is reduced compared to the content in the sputtering target. Without Si, the films consist of a BN onion-like structure surrounding TiN nanograins. With additions of Si the films eventually grows fully amorphous. The growth temperature has only minor effect on the microstructure, due to the limited surface diffusion at the investigated temperature range (100-600 °C). Ion assisted growth leads to nanoscale densification of the films and improved mechanical properties. Ti-B-Si-N thin films are also deposited by a hybrid technique where dc magnetron sputtering is combined with HIPIMS. Here, the Ti:B ratio remains equal to the target composition. Films with low Si content are porous with TiN nanograins separated by BN-rich amorphous channels and have low hardness. Increasing Si contents yield fully electron-amorphous films with higher hardness. Finally, Hf-Al-Si-N single-layer and multilayer films are grown by dc magnetron sputtering from a single Hf-Al-Si target. Amorphous growth is achieved when the growth temperature was kept at its minimum. Low-energy substrate bias modulation is used to grow nanocomposite/nanocolumnar multilayers from the single Hf-Al-Si target, where the layers has essentially the same composition but different Si bonding structure, and different degree of crystallinity

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Section: Step 1 -The Sandwich Methodsmentioning

confidence: 99%

“…These recoiled atoms are detected and analyzed in ERDA. 180 Figure 6.13 show a schematic of a RBS and ERDA setup. The techniques are described in further detail below.…”

Section: Rbsmentioning

confidence: 99%

Growth and Characterization of Amorphous Multicomponent Nitride Thin Films

Fager¹

2014

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“…13 Hydrogen content in the WC-DLC coatings was measured by using elastic recoil detection analysis ͑ERDA͒ applying a 6 MV Tandem van der Graaf accelerator. 14 The detector is a silicon surface barrier and the angle of incidence with the sample surface is 20°. The particles are recoiled from the surface by a 20 MeV Si 4+ ion beam.…”

Section: Methodsmentioning

confidence: 99%

Growth stress in tungsten carbide-diamond-like carbon coatings

Pujada

Tichelaar

Arnoldbik

et al. 2009

Journal of Applied Physics

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Growth stress in tungsten carbide-diamond-like carbon coatings, sputter deposited in a reactive argon/acetylene plasma, has been studied as a function of the acetylene partial pressure. Stress and microstructure have been investigated by wafer curvature and transmission electron microscopy ͑TEM͒ whereas composition and energy distribution functions of positive ions were obtained by electron probe microanalyzer, elastic recoil detection analysis, and mass-energy analyzer ͑MEA͒. It has been observed that the compressive stress decreases with increasing acetylene partial pressure, showing an abrupt change from Ϫ5.0 to Ϫ1.6 GPa at an acetylene partial pressure of 0.012 Pa. TEM micrographs show that by increasing the acetylene partial pressure in the plasma from 0 to 0.012 Pa, the microstructure of the coating changes from polycrystalline to amorphous. MEA results show that the most probable energy of positive ions bombarding the substrate during deposition in pure argon and argon/acetylene atmosphere is the same. Based on the results, it is concluded that the huge variation in the compressive stress at low acetylene partial pressures is due to a change in the microstructure of the coating from polycrystalline to amorphous and not to the energy of positive ions bombarding the film.

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“…The deposition time of each film was deliberately changed to keep the film thickness at about 300 nm. The composition of the deposited samples was determined with elastic recoil detection (ERD) [12] using 50 MeV Cu 8+ ions. Rutherford back scattering (RBS) experiment [13] with 2 MeV He + -atoms was used to accurately determine the mass density.…”

Section: Methodsmentioning

confidence: 99%

Bonding rearrangement in amorphous silicon nitrides deposited by hot-wire chemical vapor deposition upon thermal annealing

Mai

Verlaan

Werf

et al. 2008

Journal of Non-Crystalline Solids

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The bonding rearrangement upon thermal annealing of amorphous silicon nitride (a-SiN x :H) films deposited by hot-wire chemical vapor deposition was studied. A wide range of N/Si atom ratio between 0.5 and 1.6 was obtained for the a-SiN x :H sample series by varying the source gases ratio only. Evolutions of Si-N, Si-H and N-H bonds upon annealing were found to depend strongly on the N/Si atom ratio of the films. According to the above observations, we propose possible reaction pathways for bonding rearrangement in a-SiN x :H with different N/Si ratios.

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Elastic recoil detection

Cited by 141 publications

References 69 publications

Growth and Characterization of Amorphous Multicomponent Nitride Thin Films

Growth and Characterization of Amorphous Multicomponent Nitride Thin Films

Growth stress in tungsten carbide-diamond-like carbon coatings

Bonding rearrangement in amorphous silicon nitrides deposited by hot-wire chemical vapor deposition upon thermal annealing

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