Elastic, Optical, Transport, and Structural Properties of GaAs

Tabbakh, Thamer; Aljohany, Raghad M.; Alhazmi, Hatem; Alsulami, Rawan M.

doi:10.5772/intechopen.94566

Post-Transition Metals 2021

DOI: 10.5772/intechopen.94566

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Elastic, Optical, Transport, and Structural Properties of GaAs

Thamer Tabbakh¹,

Raghad M. Aljohany²,

Hatem Alhazmi³

et al.

Abstract: One of the major objectives of physics is to understand the physical properties of compound metals. Based on this very objective, in this chapter, we intend to review the physical as well as chemical properties of Gallium Arsenide material.

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References 27 publications

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A Comparative Analysis of Pressure Sensing Parameters for Two Dimensional Photonic Crystal Sensors Based on Si and GaAs

Dinodiya¹,

Bhargava²

2021

Silicon

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A pressure sensor based on two dimensional photonic crystal structure is presented. The structure considered for sensing is a lattice of air holes surrounded by semiconductor material. A waveguide with central microcavity is formed by filling air holes with semiconductor material. The sensing principle depends upon the shifting of central wavelength of peak towards higher wavelength region when the pressure is raised. The proposed pressure sensor can work in the range 0-5 GPa. Using this structure, two semiconductors, Si and GaAs, have been taken for analysis. It is found that shifting of resonance wavelength with pressure is more pronounced in GaAs than Si. In the dynamic range 0-5 GPa, sensitivity for sensor with Si is estimated as 1.674 nm/GPa while it is 17.00 nm/GPa for sensor with GaAs. The quality factor and figure of merit (FOM) is also found to be higher for GaAs sensor.

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A Comparative Analysis of Pressure Sensing Parameters for Two Dimensional Photonic Crystal Sensors Based on Si and GaAs

Dinodiya¹,

Bhargava²

2021

Silicon

View full text Add to dashboard Cite

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Pressure-dependent bandgap characteristics in photonic crystals with sensing applications

Sherawat,

Bokolia,

Sinha

2024

J. Opt.

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The present study elucidates a photonic crystal (PhC)-based pressure sensor exploiting the change in refractive index with pressure and the corresponding structural deformation of the dielectric material. The stress-sensitive refractive indices of the constituent materials of the PhC have been considered to study the effect of applied pressure on the photonic bandgap (PBG) characteristics of the structure. The designed pressure sensor, proposed using a two-dimensional hexagonal lattice arrangement of air holes in a dielectric slab, operates in the high-pressure range of 1–6 GPa. A comparative study of the PBG characteristics with the application of high pressure has been reported for three semiconducting materials—GaAs, Ge and Si, used for the dielectric slab in the proposed structure. GaAs is found to exhibit the highest sensitivity to pressure variations and shows more pronounced shifting of the midgap wavelength with pressure in comparison to Ge and Si. The largest PBG is seen in the Ge-based structure, closely followed by the GaAs and Si-based structures. The proposed structure is suitable for high-pressure sensing applications.

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Elastic, Optical, Transport, and Structural Properties of GaAs

Abstract: One of the major objectives of physics is to understand the physical properties of compound metals. Based on this very objective, in this chapter, we intend to review the physical as well as chemical properties of Gallium Arsenide material.

Cited by 2 publications

References 27 publications

A Comparative Analysis of Pressure Sensing Parameters for Two Dimensional Photonic Crystal Sensors Based on Si and GaAs

A Comparative Analysis of Pressure Sensing Parameters for Two Dimensional Photonic Crystal Sensors Based on Si and GaAs

Pressure-dependent bandgap characteristics in photonic crystals with sensing applications

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