Elastic constants of low-k and barrier dielectric films measured by Brillouin light scattering

Carlotti, G.; Cherault, N.; Casanova, N.; Goldberg, C.; Socino, G.

doi:10.1016/j.tsf.2005.06.019

Cited by 27 publications

(25 citation statements)

References 12 publications

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“…The former seems unlikely given prior measurements on a-SiC:H have shown excellent agreement between in-plane and out-of-plane CTE measurements, 140 and reasonable agreement was also observed in this study for the comparison PECVD a-SiN:H film where isotropic mechanical properties have been well established by multiple authors (see Table III). 145,293,294 The latter seems unlikely as the lower limit for our in-plane CTE measurement is ∼1 ppm/…”

Section: 283mentioning

confidence: 86%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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Section: 283mentioning

confidence: 86%

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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“…This is clearly visible in the spectra reported in Figure 5, taken from Ref. [27]. The upper spectra were taken using p-polarized incident light, while s-polarized light was used for the lower ones.…”

Section: Transparent Films With Micrometric Thickness: Guided Modes Amentioning

confidence: 89%

“…Please note that if the studied film has only two [27,28], or three [29] independent elastic constants, it is not necessary to look for the depolarized scattering from the SHM (that is much less intense than the other modes [30]), because the information extracted from the RW and either LM or LB is sufficient to determine the two independent constants C 11 and C 44 .…”

Section: Transparent Films With Micrometric Thickness: Guided Modes Amentioning

confidence: 99%

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Elastic Characterization of Transparent and Opaque Films, Multilayers and Acoustic Resonators by Surface Brillouin Scattering: A Review

Carlotti

2018

Applied Sciences

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There is currently a renewed interest in the development of experimental methods to achieve the elastic characterization of thin films, multilayers and acoustic resonators operating in the GHz range of frequencies. The potentialities of surface Brillouin light scattering (surf-BLS) for this aim are reviewed in this paper, addressing the various situations that may occur for the different types of structures. In particular, the experimental methodology and the amount of information that can be obtained depending on the transparency or opacity of the film material, as well as on the ratio between the film thickness and the light wavelength, are discussed. A generalization to the case of multilayered samples is also provided, together with an outlook on the capability of the recently developed micro-focused scanning version of the surf-BLS technique, which opens new opportunities for the imaging of the spatial profile of the acoustic field in acoustic resonators and in artificially patterned metamaterials, such as phononic crystals.

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“…APCVD methods are, for the most part, simple extensions of the 3C-SiC heteroepitaxial growth process detailed previously, with two distinct differences: (1) the carbonization step is omitted, and (2) the deposition temperature is lower [66]. The resulting films have an equiaxed microstructure with a mix of (100), (111), and (110) orientations. The grain size exhibits a general temperature dependence that increases with increasing deposition temperature.…”

Section: Materials Preparationmentioning

confidence: 99%

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

Zorman

Parro

2008

Physica Status Solidi (b)

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Silicon carbide (SiC) is recognized as the leading semiconductor for high power and high temperature electronics owing to its outstanding electrical properties combined with mature processing technologies for monolithic structures. SiC has long been known for its outstanding mechanical and chemical properties making it equally attractive for mechanical structures in micro‐ and nanoelectromechanical systems (MEMS and NEMS). Recent advancements in bulk and surface micromachining have led to the development of SiC analogues to common Si‐based devices (i.e., resonators, pressure sensors). This paper presents an overview of MEMS and NEMS technologies that incorporate SiC as a key component in their mechanical structure, providing both a historical perspective as well as recent developments. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Elastic constants of low-k and barrier dielectric films measured by Brillouin light scattering

Cited by 27 publications

References 12 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Elastic Characterization of Transparent and Opaque Films, Multilayers and Acoustic Resonators by Surface Brillouin Scattering: A Review

Micro‐ and nanomechanical structures for silicon carbide MEMS and NEMS

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