Elastic constants and mechanical stability of InxAl1 − xAsySb1 − y lattice-matched to different substrates

Algarni, H.; Al-Hagan, Ola; Bouarissa, N.; Alhuwaymel, T.F.; Khan, M. Ajmal

doi:10.1080/14786435.2018.1494862

Cited by 10 publications

(5 citation statements)

References 39 publications

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“…3 provide the dependence of elastic constants (C 11 , C 12 , C 44 , B u , S h, and Y 0 ) on temperature for the InP x As y Sb 1−x−y / InAs system at different values of y (0.2, 0.6, and 1). For y = 1 (InAs) at T = 300 K, the calculated C 11 , C 12 , C 44 , B u , S h , and Y 0 are in excellent accord with the published values (Algarni et al 2018). The calculated C 11 , C 12 , C 44 , B u , S h, and Y 0 at the other values of temperature for y = 0.2 and 0.6 can be taken as references for the experimental data.…”

Section: Resultssupporting

confidence: 83%

Thermal response of electronic, optical, mechanical properties, phonon frequencies, and sound velocity of InPxAsySb1−x−y/InAs quaternary semiconductor system

2022

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The temperature dependence of acoustic velocities, thermal properties, phonon frequencies, mechanical, electronic, and optical properties for the InPxAsySb1−x−y/InAs system has been studied. The physical properties of the binary components InSb, InP, and InAs that constitute the quaternary alloy were used in this research. The study has been done using the empirical pseudo-potential method (EPM) under the virtual crystal approximation (VCA). The thermal properties, phonon frequencies, and acoustic velocities for the InPxAsySb1−x−y/InAs system under the effect of temperature have not been fully studied. Therefore, we have focused on these properties under the influence of temperature. Due to the lack of published theoretical and experimental values on these properties, our findings will provide a significant reference for future experimental work.

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Section: Resultssupporting

confidence: 83%

Thermal response of electronic, optical, mechanical properties, phonon frequencies, and sound velocity of InPxAsySb1−x−y/InAs quaternary semiconductor system

2022

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“…3 provide the dependence of elastic constants (C11, C12, C44, Bu, Sh, and Y0) on temperature for the InPxAsySb1-x-y/InAs system at different values of y (0.2, 0.6, and 1). For y=1 (InAs) at T=300 K, the calculated C11, C12, C44, Bu, Sh, and Y0 are in excellent accord with the published values (Algarni et al 2018).…”

Section: E E Esupporting

confidence: 87%

Thermal response of electronic, optical, mechanical properties, phonon frequencies, and sound velocity of InPxAsySb1-x-y/InAs quaternary semiconductor system

Degheidy

Abuali

Elkenany

2022

Preprint

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The temperature dependence of acoustic velocities, thermal properties, and phonon frequencies, mechanical, electronic, and optical properties for the InPxAsySb1-x-y/InAs system has been studied. The physical properties of the binary components InSb, InP, and InAs that constitute the quaternary alloy were used in this research. The study has been done using the empirical pseudo-potential method (EPM) under the virtual crystal approximation (VCA). The thermal properties, phonon frequencies, and acoustic velocities for the InPxAsySb1-x-y/InAs system under the effect of temperature have not been fully studied. Therefore, we have focused on these properties under the influence of temperature. Due to the lack of the published theoretical and experimental values on these properties, our findings will provide a significant reference for future experimental work.

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“…The bulk (Bu), Young's (Y0), shear moduli, and other important mechanical quantities can be determined as in Refs. [29][30][31][32] . The longitudinal and transverse phonon frequencies (LO and TO) were calculated using the Lyddane-Sachs-Teller relations 33,34…”

Section: Methods and Calculationsmentioning

confidence: 99%

Insight into pressure effect on the structural, electronic, optical, mechanical, phonon frequencies, and acoustic speed of nanostructure Ga x In 1-x P y Sb z As 1-y-z alloy lattice matched to GaSb substrate

Elkenany

Alfrnwani

2023

Preprint

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The electronic, optical, and elastic characteristics of the GaxIn1-xPySbzAs1-y-z alloy lattice matched to the GaSb substrate using a pseudo-potential formalism (EPM) based on the virtual crystal approximation (VCA) are performed. The mechanical features, acoustic velocity, and phonon frequencies of the GaxIn1-xPySbzAs1-y-z/GaSb system are calculated. The sensitivity of these properties to pressure is considered. Our findings are reasonably consistent with the experimental evidence that is currently available. The studied properties of this alloy under the influence of pressure are a new achievement. Novel device applications would be made possible by the pentanary GaxIn1-xPySbzAs1-y-z alloy under high pressure.

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Elastic constants and mechanical stability of In_xAl_1 −_xAs_ySb_1 −_y lattice-matched to different substrates

Cited by 10 publications

References 39 publications

Thermal response of electronic, optical, mechanical properties, phonon frequencies, and sound velocity of InPxAsySb1−x−y/InAs quaternary semiconductor system

Thermal response of electronic, optical, mechanical properties, phonon frequencies, and sound velocity of InPxAsySb1−x−y/InAs quaternary semiconductor system

Thermal response of electronic, optical, mechanical properties, phonon frequencies, and sound velocity of InPxAsySb1-x-y/InAs quaternary semiconductor system

Insight into pressure effect on the structural, electronic, optical, mechanical, phonon frequencies, and acoustic speed of nanostructure Ga x In 1-x P y Sb z As 1-y-z alloy lattice matched to GaSb substrate

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