Elastic and surface energies: Two key parameters for CdSe quantum dot formation

Robin, I. C.; André, R.; Bougerol, Catherine; Aichele, Thomas; Tatarenko, S.

doi:10.1063/1.2209202

Cited by 29 publications

(22 citation statements)

References 20 publications

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“…Obviously those surface undulations are not suitable as QDs. On the contrary, we have obtained well formed islands, with a higher aspect ratio (height/base = 3 nm/20 nm), by interrupting growth close to the critical thickness and making the surface evolve by covering it, at low temperature (~ 0 °C), with amorphous tellurium [7]. The next step towards QDs consists in capping the ZnTe islands with ZnSe.…”

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confidence: 90%

Type‐II excitons in ZnTe/ZnSe quantum dots

André

Najjar

Besombes

et al. 2009

Phys. Status Solidi (c)

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We present the photoluminescence and time resolved photoluminescence properties of an ensemble of ZnTe quantum dots embedded in a ZnSe matrix. Those heterostructures exhibit a type‐II band alignment with holes confined within the dots and electrons kept in the close vicinity of the dots by coulomb attraction. We show that the structural and optical features of the samples, grown by molecular beam epitaxy, are highly sensitive to the growth conditions. Depending on the Se to Zn flux ratio, the ZnTe islands can disappear and lead to a thin 2D quantum well, or be preserved and localize excitons, as evidenced by photoluminescence experiments. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Type‐II excitons in ZnTe/ZnSe quantum dots

André

Najjar

Besombes

et al. 2009

Phys. Status Solidi (c)

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“…Consequently, several alternative approaches have been developed to induce/enhance QD formation in this system [3][4][5][6][7], one of which, as originally proposed by Tinjod et al, is by depositing and re-desorbing an amorphous group-VI layer onto a supercritically strained two-dimensional layer of the island-forming II-VI material [3]. Deposition and subsequent desorption of a Te-(Se-)amorphous layer in case of CdTe (CdSe) growth on ZnTe (ZnSe) has been demonstrated, by direct imaging techniques, to result in the formation of large, three-dimensional islands [8,9].…”

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confidence: 96%

Amorphous-Te-mediated self-organization of CdSe/ZnSe nanostructures

Mahapatra¹,

Margapoti²,

Worschech³

et al. 2007

Journal of Crystal Growth

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“…It consists in covering a layer of strained CdSe on (0 0 1) ZnSe with amorphous selenium at low temperature and of subsequent desorption of this amorphous selenium at growth temperature. The thickness of the CdSe layer has to be adjusted just below the critical thickness corresponding to the formation of misfit dislocations [15]. In this paper we report on further investigations about this formation process and on structural and optical properties of CdSe islands induced by amorphous Se.…”

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confidence: 98%