Elastic and mechanical properties of ion-implanted silicon determined by surface-acoustic-wave spectrometry

Szabadi, M.; Hess, Peter; Kellock, A. J.; Coufal, H.; Baglin, J. E. E.

doi:10.1103/physrevb.58.8941

Cited by 56 publications

(41 citation statements)

References 15 publications

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“…For Ar implantation, the decrease of elastic modulus and hardness is due to the amorphization on the Si surface caused by the accumulation of radiation damage, which creates a layer of amorphous Si during the Ar implantation. 3,4 Amorphous Si often has lower mechanical properties than crystal Si. 3,4,22 For Ne implantation, an increase of both elastic modulus and hardness is also observed.…”

Section: Resultsmentioning

confidence: 99%

“…3,4 Amorphous Si often has lower mechanical properties than crystal Si. 3,4,22 For Ne implantation, an increase of both elastic modulus and hardness is also observed. The retained Ne in Si 11 might cause the distortion of Si structure and contribute to the difference in mechanical properties.…”

Section: Resultsmentioning

confidence: 99%

“…2 Different ions such as Ar, 3,4 C, 5,6 H, 7,8 N, 5,6,9 Ne, 10,11 Cr, 12 P, 13 and O 7 have been used to implant Si to improve either the mechanical and/or tribological properties or other electrophysical properties. Although much work has focused on the effect of individual ion implantation on the mechanical and tribological behavior of implanted Si, direct comparison of mechanical and tribological behavior of different ion-implanted Si is still lacking and research on the difference of damage mechanisms among different ion implantations during scratch and wear is still scant.…”

Section: Introductionmentioning

confidence: 99%

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Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si

Park

2010

J. Mater. Res.

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Ion implantation has been widely used to improve the mechanical and tribological properties of single crystalline silicon, an essential material for the semiconductor industry. In this study, the effects of four different ion implantations, Ar, C, N, and Ne ions, on the mechanical and tribological properties of single crystal Si were investigated at both the nanoscale and the microscale. Nanoindentation and microindentation were used to measure the mechanical properties and fracture toughness of ion-implanted Si. Nano and micro scratch and wear tests were performed to study the tribological behaviors of different ion-implanted Si. The relationship between the mechanical properties and tribological behavior and the damage mechanism of scratch and wear were also discussed.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si

Park

2010

J. Mater. Res.

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“…For various a-SiO x compositions, these two moduli were successfully evaluated by first-principles calculations using a statistical approach in our previous work 63 and the endpoint cases (x = 0 and 2) have been wellcharacterized through experimental measurements. [64][65][66][67][68][69] Additional mechanical properties, such as the Poisson ratio (ν) and shear modulus (G), can be calculated once Y and B are known because only two of these four quantities are independent in isotropic materials. 63 We apply our previously reported moduli calculation method to VFF total energy data to evaluate Y and B based on both KT(LH) and KT(TT) potentials for a-Si and a-SiO 2 in order to quantify the degree of rigidity in respective a-Si and a-SiO 2 matrices.…”

Section: Mechanical Propertiesmentioning

confidence: 99%

Ab initioparameterized valence force field for the structure and energetics of amorphous SiOx(0 ⩽x
Lee
¹
,
Bondi
²
,
Hwang
³

2011
Phys. Rev. B

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We present a modified valence force field model for the structure and energetics of amorphous silicon suboxides (a-SiO x , 0 ≤ x ≤ 2). The parameters are optimized to fit the results from cluster and periodic density functional theory (DFT) calculations of various model structures. The potential model well reproduces the DFT energetics of various a-SiO x systems for all O/Si composition ratios. We also examine how the choice of force fields affects the atomic-level description of phase separation in a-SiO x and a-Si/a-SiO 2 interfaces using a continuous random network model-based Monte Carlo approach. The results highlight the critical role of the relative rigidity between Si and SiO 2 matrices in determination of the structural properties of the Si/SiO 2 composite system, such as interface bond topology, degree of phase separation, and abruptness of the interface.

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“…[1][2][3][4][5][6] A common method for such investigations is to use plane acoustic wave fronts, and to repeat the experiment for each propagation direction sequentially. However, the imaging of acoustic waves emanating from a point source is very useful for materials characterization because phenomena dependent on propagation direction, such as surface phonon focusing, can be effectively and immediately recorded with an omnidirectional acoustic wave vector distribution.…”

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confidence: 99%

Direct access to the dispersion relations of multiple anisotropic surface acoustic modes by Fourier image analysis

Sugawara

Wright

Matsuda

2003

Applied Physics Letters

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We present a method based on a combination of temporal and spatial Fourier image analysis, involving the incorporation of a time-reversed acoustic propagation component, that can be used to obtain the angular dispersion or general dispersion relations of multiple surface acoustic modes excited by a localized pulsed source. The method is applied to the study of acoustic propagation at the surface of the highly anisotropic single-crystal TeO 2 coated with a thin gold film. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1602151͔ Surface acoustic wave propagation on bulk materials and thin film structures has proved of fundamental and practical interest for studying anisotropy and measuring film thicknesses or elastic properties. 1-6 A common method for such investigations is to use plane acoustic wave fronts, and to repeat the experiment for each propagation direction sequentially. However, the imaging of acoustic waves emanating from a point source is very useful for materials characterization because phenomena dependent on propagation direction, such as surface phonon focusing, can be effectively and immediately recorded with an omnidirectional acoustic wave vector distribution. [7][8][9][10][11] For surface acoustic imaging with impulsive point sources, the group velocity is readily measured from the wave front shape. However, it is the phase velocity-or its reciprocal, the slowness-that is more directly related to material elastic properties. 12 Impulsive point-source acoustic excitation of anisotropic samples by nature involves the generation of several surface and bulk acoustic modes that can produce complex overlapping wave fronts; no general method for the direct and automatic extraction of the individual dispersion relations ͑and hence the phase velocities͒ from such experimental images involving multiple propagating modes traveling parallel to the surface has been proposed. Previous methods can only be applied to images where only one acoustic mode propagates in any particular direction. 9 In this letter we present a general technique for analysis in time-resolved acoustic imaging at surfaces in the two lateral spatial dimensions that allows the extraction of the full set of dispersion relations for all excited modes simultaneously.We demonstrate the method with experiments on the transparent tetragonal crystal TeO 2 cut in the ͑001͒ orientation and coated with a thin polycrystalline gold film of thickness ͑40 nm͒ small enough to avoid significant thin film dispersion here and thus simplify comparison with theory. This crystal is strongly anisotropic in this cut and results in a complex phonon focusing pattern, ideal for evaluating techniques for acoustic mode analysis. 9, 13 We use an ultrafast optical pump and probe technique based on a common-path interferometer. 14 Acoustic waves are thermoelastically excited at a ϳ4 m Gaussian spot ͑full width at half maximum intensity͒ in the sample using optical pulses normally incident from the substrate side at wavelength 415 nm, repetition rate 80 MHz, du...

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Elastic and mechanical properties of ion-implanted silicon determined by surface-acoustic-wave spectrometry

Cited by 56 publications

References 15 publications

Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si

Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si

Ab initioparameterized valence force field for the structure and energetics of amorphous SiOx(0 ⩽x
Lee
¹
,
Bondi
²
,
Hwang
³

2011
Phys. Rev. B

Direct access to the dispersion relations of multiple anisotropic surface acoustic modes by Fourier image analysis

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Elastic and mechanical properties of ion-implanted silicon determined by surface-acoustic-wave spectrometry

Cited by 56 publications

References 15 publications

Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si

Nano/micro-mechanical and tribological characterization of Ar, C, N, and Ne ion-implanted Si

Ab initioparameterized valence force field for the structure and energetics of amorphous SiOx(0 ⩽x Lee1, Bondi2, Hwang3 2011Phys. Rev. B

Direct access to the dispersion relations of multiple anisotropic surface acoustic modes by Fourier image analysis

Contact Info

Product

Resources

About

Ab initioparameterized valence force field for the structure and energetics of amorphous SiOx(0 ⩽x
Lee
¹
,
Bondi
²
,
Hwang
³

2011
Phys. Rev. B