2016
DOI: 10.1088/1742-6596/758/1/012010
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Elastic and electronic properties calculations of the filled skutterudite CeOs4P12

Abstract: The full-potential linear muffin-tin orbital method (FP-LMTO) within the local density approximation (LDA) using the Perdew-Wang parameterization is used to calculate the structural, electronic and elastic properties of the filled skutterudite CeOs 4 P 12 . The results of the electronic properties show that this compound is an indirect band gap material (Γ-N). A special interest has been made to the determination of the elastic constants since there have been no available experimental and theoretical data. The… Show more

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Cited by 3 publications
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“…The observed semiconducting natures of the sample alloys with energy gap are consistent with the previous reports. 25–27 The valence region is mainly occupied by the transition atom M (Fe or Os) and the hybridization between Ce, M, and pnictogen atoms at −0.49 eV in all the sample materials is observed. The total and partial density of states (TDOS and PDOS) (Fig.…”
Section: Resultsmentioning
confidence: 97%
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“…The observed semiconducting natures of the sample alloys with energy gap are consistent with the previous reports. 25–27 The valence region is mainly occupied by the transition atom M (Fe or Os) and the hybridization between Ce, M, and pnictogen atoms at −0.49 eV in all the sample materials is observed. The total and partial density of states (TDOS and PDOS) (Fig.…”
Section: Resultsmentioning
confidence: 97%
“…19–21 The semiconducting Ce-based skutterudites like CeFe 4 P 12 , CeFe 4 As 12 , and CeOs 4 P 12 22,23 have exhibited inconsistency in their experimental energy band gaps as compared to theoretical predictions. 24–26 Furthermore, thermoelectric studies have predicted the maximum dimensionless ZT value of 0.1 and 0.36 for CeFe 4 P 12 and CeFe 4 As 12 at 800 K, 27 respectively, whereas CeOs 4 P 12 revealed the ZT value of 0.02 at 300 K. 23 Such a value of ZT is not enough from the thermoelectric applications point of view and thus requires an enhancement in their ZT value. Over the past years, various doping techniques have been adopted to enhance the thermoelectric properties.…”
Section: Introductionmentioning
confidence: 99%
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