Bismuth antimony telluride (Bi 1Àx Sb x ) 2 Te 3 thermoelectric compounds were synthesized by pulse plating. Due to the large number of parameters available (pulse waveform, on/off pulse time, applied current density), this advanced form of electrodeposition allows better control of the interfacial supply and electrochemical reactions and offers effective ways to improve macroscopic properties such as adhesion and to produce crack-free hard deposits and finegrained films with higher uniformity and lower porosity. The influence of pulse parameters (pulse time t on , cathodic current density J c ) on the stoichiometry, roughness, and crystallography of deposits was studied. The thermoelectric properties (electrical resistivity and Seebeck coefficient) of the films were measured. The results revealed that deposits have p-type conductivity directly after electroplating (Seebeck coefficient around 150 lV K À1 ), in contrast to films synthesized by direct current, which require annealing. An improvement of resistivity was observed: for a direct-current-deposited film the resistivity is around 5000 lX m, whereas for a pulse-deposited film the resistivity was around 200 lX m.