Elaboration and characterization of Si(n)/PS/ZnO(n) structure obtained by rf-magnetron sputtering from aerogel nanopowder target material

Alaya, A.; Nouiri, M.; Ayadi, Z. Ben; Djessas, K.; Khirouni, K.; Mır, L. El

doi:10.1016/j.mseb.2008.11.015

Cited by 11 publications

(7 citation statements)

References 28 publications

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“…[10][11][12] Improvement of the optical and electrical properties of ZnO based thin films for optoelectronic devices have been widely investigated by different authors. Electrical resistivity values between 10 −3 and 10 −4 cm have been presented, [10][11][12][13][14][15][16] which are comparable to that of indium tin oxide (ITO) films. 17,18 Al-doped ZnO (AZO) has many advantages over ITO as a transparent conducting oxide (TCO), owing to its low cost, abundance, high thermal stability and absence of toxicity.…”

Section: Introductionmentioning

confidence: 99%

“…21 Several studies have been reported about AZO sputtering targets preparation and respective thin films deposition and characterization. [10][11][12][19][20][21][22][23][24][25][26] However, most of them are produced using micropowder composites obtained by mechanical grinding method and do not focus on the optimization of target properties. Studies correlating the properties of nanostructured composite powders, the sintering process of the targets and corresponding thin film properties are hardly found.…”

Section: Introductionmentioning

confidence: 99%

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Aluminum doped zinc oxide sputtering targets obtained from nanostructured powders: Processing and application

Neves

Barros

Antunes³

et al. 2012

Journal of the European Ceramic Society

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Aluminum doped zinc oxide sputtering targets obtained from nanostructured powders: Processing and application

Neves

Barros

Antunes³

et al. 2012

Journal of the European Ceramic Society

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“…It was reported in this work that the electrical contact take place in the volume of the PS film, which improve the electroluminescence efficiency [22]. In our previous work we have presented the PS/ZnO:Al 3% junction as a promising solar cell [23]. This paper focuses on the electrical characterization and the photovoltaic parameters of solar cell based on n-IZO/p-PS heterostructure.…”

Section: Introductionmentioning

confidence: 98%

Electrical Study of Si/PS/ZnO:In Solar Cell Structure

et al. 2015

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Indium doped zinc oxide (IZO) thin films have been grown on porous silicon, in order to develop solar cell structure, by rf-sputtering at room temperature using indium (4 at %) doped nanocrystalline powder previously synthesized by the sol-gel method. Such layers are polycrystalline with a hexagonal wurtzite structure with a thickness of about 400 nm and preferential orientation in (002) crystallographic direction. Electrical study under illumination reveals that this type of nanostructure is promising for solar cell application. By comparing Si/PS/IZO and Si/PS/ZnO/IZO structures, we illustrate a satisfactory photovoltaic conversion with these structures. Also we reveal that interposing an undoped ZnO layer leads to a degradation of PV parameters, specially the short-circuit current (I sc ) was affected. In fact, I sc decreases from 3 mA to 0.8 mA by adding the undoped ZnO thin layer. The open circuit voltage is less affected. A decay of 30 mV was recorded. C-V analysis gave a carrier density of about 10 16 cm -3 for both cells.

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“…The most promising thin films seem to be the In-doped zinc oxide thin films, with a V oc = 0.71 V, J sc = 1.18 mA/cm 2 and FF = 0.52 photovoltaic parameters for amorphous silicon solar cells, comparing to Voc = 0.49 V, Jsc = 0.94 mA/cm 2 and a fill factor parameter about 0.39 with ZnO:Al thin layer. And V oc = 0.52 V, J sc = 0.11 mA/cm 2 and FF = 0.42 for ZnO:Ga. We have presented in an earlier works the electrical study of a ZnO:Al/PS/Si structure [14].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and electrical properties of Si/PS/ZnO:In solar cell deposited by rf-magnetron sputtering based on nanopowder target material

Belaid

Nouiri

Ayadi

et al. 2015

J Mater Sci: Mater Electron

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Indium doped zinc oxide (IZO) nanopowder synthesized by sol-gel method has been grown onto p type porous silicon substrate by rf-magnetron sputtering at room temperature. The obtained IZO thin films with a thickness of about 400 nm using indium concentration of 4 at%, were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. Atomic force microscopy and scanning electron microscopy were used to study the films morphology. The obtained IZO films, generally used as TCO in solar cells, have a typical columnar structure and very smooth surface. From electrical characterizations: current-voltage (I-V) on dark and under illumination and capacity-voltage (C-V) at different frequency measurements, we can conclude that we have Schottky electronic behaviors where the depletion-layer is developed principally in p-type silicon region. The grown structure is promising for photovoltaic application.

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Elaboration and characterization of Si(n)/PS/ZnO(n) structure obtained by rf-magnetron sputtering from aerogel nanopowder target material

Cited by 11 publications

References 28 publications

Aluminum doped zinc oxide sputtering targets obtained from nanostructured powders: Processing and application

Aluminum doped zinc oxide sputtering targets obtained from nanostructured powders: Processing and application

Electrical Study of Si/PS/ZnO:In Solar Cell Structure

Fabrication and electrical properties of Si/PS/ZnO:In solar cell deposited by rf-magnetron sputtering based on nanopowder target material

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