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Park, Joo Dong; Oh, Tae-Sung

doi:10.1023/a:1006741910588

Cited by 3 publications

(3 citation statements)

References 11 publications

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“…As bismuth volatility occurs during annealing process of the MOD-derived SBT films, addition of excess bismuth oxide into the coating solutions is required to prevent the bismuth deficiency of the films. Also, it has been reported that Sr-deficient composition improved the ferroelectric properties of the SBT films [12].…”

Section: Methodsmentioning

confidence: 94%

Characteristics of Pt/SBT/Al₂O₃/Si Structures for MFIS-FET Applications

Choi

Kim

2001

MRS Proc.

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Pt/Sr 0.85 Bi 2.4 Ta 2 O 9 /Al 2 O 3 /Si structures were prepared for MFIS-FET applications. After depositing Al 2 O 3 film of 10-50 nm thickness by reactive sputtering on Si(100) substrate as a buffer layer, Sr 0.85 Bi 2.4 Ta 2 O 9 (SBT) thin film of 400 nm thickness was prepared onto it by metalorganic decomposition process. With annealing at 800°C for 1 hour in oxygen ambient, the 400 nm-thick SBT film exhibited 2P r of 10.2 µC/cm 2 and E c of 37.5 kV/cm at ±5V. C-V characteristics of the Pt/SBT/Al 2 O 3 /Si structures exhibited hysteresis loops due to the ferroelectric switching behavior of the SBT film. When the Al 2 O 3 buffer layer was thicker than 10 nm, the memory window and maximum capacitance of the Pt/SBT/Al 2 O 3 /Si structure increased with decreasing the thickness of the Al 2 O 3 buffer layer, and the Pt/SBT(400 nm)/Al 2 O 3 (10 nm)/Si structure exhibited a memory window of 2.2 V at ±5 V.

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Section: Methodsmentioning

confidence: 94%

Characteristics of Pt/SBT/Al₂O₃/Si Structures for MFIS-FET Applications

Choi

Kim

2001

MRS Proc.

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“…The crystallization results illustrate that the rapid ramping rate reduces the crystallization temperature to 740 o C, which is contributed to the structural relaxation. 2.2 Typical P-E hysteresis loop for ferroelectrics [3] ........................................10 Figure 2.3 Crystal Structures of the Bi-layered Perovskite [10] ....................................14 Figure 2.4 XRD patterns of the Sr x Bi 2.4 Ta 2 O 9 /Pt/Ti/SiO 2 /Si (x=0.7, 0.85, 1.0, 1.15, 1.3) films after annealing at 800℃ for 1 h in oxygen ambient [13] . ............................15 Figure 2.5 XRD patterns of SBT films deposited on Pt/SiO 2 /Si as a function of bismuth atomic content (a)3.0, (b)3.4, (c)4.2 [15] ..................................................16 Figure 2.6 XRD profiles of SBT/Pt/MgO (a) and SBT/Pt/Ti/SiO 2 /Si (b).…”

Section: IImentioning

confidence: 99%

“…However, only Sr and Bi concentrations have some effects on growing orientation of SBT thin films. Study on relationship between Sr content and orientated crystallization of MOD-derived Sr x Bi 2.4 Ta 2 O 9 films [13] indicates that the amorphous film can be fully crystallized to the bismuth layered perovskite structure with random orientation by annealing when the Sr content ranging from 0.7 to 1.0. For the films with the Sr content larger than 1.0, however, a decrease in (105) peak intensity and increase in peak broadening were films after annealing at 800 for 1 h in oxygen ambient ℃ [13] .…”

Section: Effect Of Film Composition On Growing Orientationmentioning

confidence: 99%

Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application

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Utilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2E c ), sufficient fatigue endurance against repetitive polarization switching. Layered perovskite structure SrBi 2 Ta 2 O 9 (SBT) thin film has attracted ever increasing attention because it exhibits fatigue-free property up to 10 12 cycles (even on Pt bottom electrode), excellent retention characteristics, and low leakage current density. However, two shortcomings are involved in SBT thin films: the low remnant polarization (2Pr<10μC/cm 2 ) and high annealing temperature (>800℃). Substitution at A or B site can effectively modify polarization properties. Trivalent elemental substitution such as Bi 3+ , La 3+ and Nd 3+ with the Sr 2+ site induces A-site cation vacancies to satisfy charge neutrality, which significantly improves the low-field polarization.This project aims to improve the polarization properties through doping, and at the same time to reduce the crystallization temperature of the Aurivillius phase. The Sr-deficient and Nd-doped SBT thin films are deposited via radio frequency magnetron sputtering. The relationship among deposition parameters, microstructure and polarization properties of Sr-deficient SBT thin films are discussed in details so that pure layered perovskite structure without pyrochlore is obtained. Based on this,

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