2003
DOI: 10.1023/a:1022865825205
|View full text |Cite
|
Sign up to set email alerts
|

Untitled

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

2
44
1

Year Published

2005
2005
2018
2018

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 49 publications
(47 citation statements)
references
References 11 publications
2
44
1
Order By: Relevance
“…[9] Thus, pure chemical etching by oxygen species can only compete with deposition processes in the virtual absence of energetic particles and very low deposition rates. [69] For a different reactor configuration where ion bombardment on the film surface is much lower (asymmetric setup with the substrate placed on the grounded electrode), we could not obtain a steady decrease in the deposited mass as a function of the energy input for a CO 2 / C 2 H 4 ratio of 6:1. [6] This supports the assumption that the decrease in the growth rate with increasing energy input observed in Figure 4 and 5 for the 6:1 gas ratio is mainly caused by ion-enhanced etching effects.…”
Section: A-c:h:omentioning
confidence: 78%
“…[9] Thus, pure chemical etching by oxygen species can only compete with deposition processes in the virtual absence of energetic particles and very low deposition rates. [69] For a different reactor configuration where ion bombardment on the film surface is much lower (asymmetric setup with the substrate placed on the grounded electrode), we could not obtain a steady decrease in the deposited mass as a function of the energy input for a CO 2 / C 2 H 4 ratio of 6:1. [6] This supports the assumption that the decrease in the growth rate with increasing energy input observed in Figure 4 and 5 for the 6:1 gas ratio is mainly caused by ion-enhanced etching effects.…”
Section: A-c:h:omentioning
confidence: 78%
“…SiO 2 coatings are routinely obtained by low-temperature PECVD processes from a number of different organosilicon precursors, and the deposition conditions used determine the structure of the SiO 2 layer deposited. [19][20][21] Infrared absorption spectroscopy of films deposited from hexamethyl disiloxane (HMDSO) and oxygen (gas ratio HMDSO/O 2 was 1:10) provides information on the structural and compositional properties of the SiO 2 -like films, Figure 1a. The three transverse optical (TO) modes at 460, 800, and 1075 cm -1 are well documented in transmission measurements and are identified as the rocking, bending, and asymmetric stretching modes of the Si-OSi bond.…”
Section: Adhesion Aspectsmentioning
confidence: 99%
“…1b) upon the same treatment. Thus the deposition of a 4 nm thick cover layer made by plasma polymerization of HMDSO [17,18] lead to a significant protection of a wear sensitive polymeric media.…”
Section: Introductionmentioning
confidence: 99%
“…The surfaces of plasma deposited (multi-) layers have previously been studied intensively [19,20]. Hard, SiO x like layers can be fabricated [17,18] for applications such as antireflective coatings [21], barrier layers [22], corrosion protection films [23] and biocompatible films [24]. The chemical composition of films made from HMDSO can be tuned either by the HMDSO/O 2 gas ratio and/or the RF-input power of the plasma deposition process [18,[25][26][27][28].…”
Section: Introductionmentioning
confidence: 99%