Efficient Transfer of Large-Area Graphene Films onto Rigid Substrates by Hot Pressing

Kang, Junmo; Hwang, Soonhwi; Kim, Jaehwan; Kim, Min Hyeok; Ryu, Je-Kwang; Seo, Sangjae; Hong, Byung Hee; Kim, Moon Ki; Choi, Jae‐Boong

doi:10.1021/nn301207d

Cited by 158 publications

(133 citation statements)

References 44 publications

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“…Kang et al72 reported an improved method by using two hot pressing plates ( Figure 8a). The two hot metal plates were applied with controllable temperature (125 °C) and pressure (4 N m −2 ).…”

Section: Transfer Of Graphene Synthesized By Cvd Methods On Metal Subsmentioning

confidence: 99%

Progress and Challenges in Transfer of Large‐Area Graphene Films

2016

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Graphene, the thinnest, strongest, and stiffest material with exceptional thermal conductivity and electron mobility, has increasingly received world‐wide attention in the past few years. These unique properties may lead to novel or improved technologies to address the pressing global challenges in many applications including transparent conducting electrodes, field effect transistors, flexible touch screen, single‐molecule gas detection, desalination, DNA sequencing, osmotic energy production, etc. To realize these applications, it is necessary to transfer graphene films from growth substrate to target substrate with large‐area, clean, and low defect surface, which are crucial to the performances of large‐area graphene devices. This critical review assesses the recent development in transferring large‐area graphene grown on Fe, Ru, Co, Ir, Ni, Pt, Au, Cu, and some nonmetal substrates by using various synthesized methods. Among them, the transfers of the most attention kinds of graphene synthesized on Cu and SiC substrates are discussed emphatically. The advances and the main challenges of each wet and dry transfer method for obtaining the transferred graphene film with large‐area, clean, and low defect surface are also reviewed. Finally, the article concludes the most promising methods and the further prospects of graphene transfer.

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Section: Transfer Of Graphene Synthesized By Cvd Methods On Metal Subsmentioning

confidence: 99%

Progress and Challenges in Transfer of Large‐Area Graphene Films

2016

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“…Metal substrates are conductors that have to be etched away before the graphene can be used for device fabrication. During the substrate etching and graphene transfer process, a lot of defects, for example, cracks, folds and wrinkles [28], can be created which substantially degrade the quality of graphene.…”

Section: Cvd Growth Of Graphene On Metalsmentioning

confidence: 99%

Characterizations of as grown and functionalized epitaxial grapheneg rown on SiC surfaces

Xia¹

2015

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III AbstractThe superior electronic and mechanical properties of Graphene have promoted graphene to become one of the most promising candidates for next generation of electronic devices. Epitaxial growth of graphene by sublimation of Si from Silicon Carbide (SiC) substrates avoids the hazardous transfer process for large scale fabrication of graphene based electronic devices. Moreover, the operation conditions can potentially be extended to high temperatures, voltages and frequencies. This thesis is focused on characterizations of as grown and functionalized epitaxial graphene grown on both Si-face and C-face SiC. Synchrotron radiation-based techniques are employed for detailed investigations of the electronic properties and surface morphology of as grown and functionalized graphene.Large area and homogeneous monolayer (ML) graphene has been possible to grow on SiC(0001) substrates by sublimation, but efforts to obtain multilayer graphene of similar quality have been in vain. A study of the transport behavior of silicon atoms through carbon layers was therefore performed for the purpose to gain a better understanding of the growth mechanism of graphene on Si-face SiC. It showed that a temperature of about 800°C is required for Si intercalation into the interface to take place. Intercalation of Si was found to occur only via defects and domain boundaries which probably is the reason to the limited growth of multilayer graphene. Annealing at 1000-1100°C induced formation of SiC on the surface and after annealing above 1200°C Si started to de-intercalate and desorb/sublimate. Different alkali metals were found to affect graphene grown in SiC quite differently. Li started to intercalate already at room temperature by creating cracks and defects, while K, Rb and Cs were found unable to intercalate into the graphene/SiC interface. Effects induced by the alkali metal Na on graphene grown on both Si-face and C-face SiC were therefore studies. For the Si-face, partial intercalation of Na through graphene was observed on both 1 ML and 2 ML areas directly after Na deposition. Annealing at a temperature of about 75°C strongly promoted Na intercalation at the interface. The intercalation was confirmed to start at domain boundaries between 1 ML and 2 ML areas and at stripes/streaks on the 1 ML areas. Higher annealing temperature resulted in desorption of Na from the sample surface. Also for C-face graphene, a strong n-type doping was observed directly after Na deposition. Annealing at temperatures from around 120 to 300°C was here found to result in a considerable π-band broadening, interpreted to indicate penetration of Na in between the graphene layers and at the graphene SiC interface.The thermal stability of graphene based electronic devices can depend on the choice of contact material. Studies of the stability and effects induced by two commonly used metals (Pt and Al) on Si-face graphene were carried out after deposition and after subsequent annealing at different temperatures. Both Al and Pt were found to be g...

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“…Several authors have reported methods for the transfer of graphene from metallic template layers to other substrates such as silica [10,11]. An alternative approach is to grow graphene on copper films deposited onto silicon or silica [12,13].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of multi-layer graphene films on silica using physical vapour deposition

Oldfield

Huynh

Hawkins³

et al. 2017

Carbon

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Carbon films and underlying copper template-layers have been deposited energetically in the same filtered cathodic vacuum arc system at 750 °C. The high quality <111> copper templatelayers were supported on either silicon or silica and were subsequently sacrificially etched. On silicon, copper silicide formed during the copper deposition process, inhibiting ordered growth in the carbon film. On silica, large areas of multi-layer graphene (up to ~10 layers) oriented parallel to the substrate were synthesised and these remained intact after the sacrificial etching process. The ability to produce both copper and multilayer graphene layers in one system enables simplified fabrication of this material.

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Efficient Transfer of Large-Area Graphene Films onto Rigid Substrates by Hot Pressing

Cited by 158 publications

References 44 publications

Progress and Challenges in Transfer of Large‐Area Graphene Films

Progress and Challenges in Transfer of Large‐Area Graphene Films

Characterizations of as grown and functionalized epitaxial grapheneg rown on SiC surfaces

Synthesis of multi-layer graphene films on silica using physical vapour deposition

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