Efficient three-state WCDMA PA integrated with high-performance BiHEMT HBT / E-D pHEMT process

Apel, T.; Henderson, T.; Tang, Yu-Lung; Berger, O.

doi:10.1109/rfic.2008.4561406

Cited by 13 publications

(2 citation statements)

References 3 publications

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“…Class AB operation mode is a good compromise to meet these kinds of requirements for wireless power amplifiers and the conduction angle in Class AB PAs is a very important design parameter since the efficiency and the linearity are a strong function of the conduction angle, or device current at quiescent condition without RF signals [2]. Therefore, many papers have been published for designing the bias circuits in order to get higher efficiency and better linearity [3,4,5].…”

Section: Introductionmentioning

confidence: 99%

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Effect of bias circuits on receiver band noise of GaAs HBT power amplifiers

Kim

Lee

2010

IEICE Electron. Express

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This paper presents the effect of different bias circuits configurations on the noise performance of GaAs HBT (heterojunction bipolar transistor) power amplifiers at the receiver band. Various bias circuits have been used for the power amplifier in an WCDMA (wideband code division multiple access) transmitter module including the output duplexer at PCS band (Tx: 1850 ∼ 1910 MHz, Rx: 1930 ∼ 1990. A bias circuit with cascode current mirrors for the 1 st and the 2 nd stages shows less than −180 dBm/Hz receiver band noise with −39 dBc of ACPR (adjacent channel power ratio) at 25.2 dBm antenna output power.

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Section: Introductionmentioning

confidence: 99%

“…The output noise voltages for Fig. 2 (c) and 2 (d) are similar since the noise contribution from Q4 diode can be negligible and given in equation (3). In these expressions, rπ, re and gm are obtained from the small signal equivalent circuits of each transistor at given bias condition (Table I).…”

Section: Introductionmentioning

confidence: 99%