Efficient thermal analysis method for large scale compound semiconductor integrated circuits based on heterojunction bipolar transistor

Abstract

In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar transistor with considering the change of thermal conductivity with temperature. The influence caused by the thermal conductivity can be equivalent to the increment of the local temperature surrounding the individual device. The junction temperature for each device can be efficiently calculated by the combination of the semianalytic temperature distribution function and the iteration of local temperature with high accuracy, providing a temperature distribution for a full chip. Applying this method to the InP frequency divider chip and the GaAs analog to digital converter chip, the computational results well agree with the results from the simulator COMSOL and the infrared thermal imager respectively. The proposed method can also be applied to thermal analysis in various kinds of semiconductor integrated circuits.

An analytic method for parameter extraction of InP HBTs small-signal model

“…Recently, there has been increased interest in heterojunction bipolar transistors (HBTs) because of their high-speed capability and high-power applications (Liu et al , 2020; Zhang et al , 2019a; Yang et al , 2018; Zhang et al , 2019b). Indium Phosphide (InP)/Indium Gallium Arsenide (InGaAs) HBTs are the dominant choice over Indium Gallium Phosphide/Gallium arsenide HBTs due to superior device performance and material properties (Shivan et al , 2018; Park et al , 2017; Zhang et al , 2019c; Nardmann et al , 2019).…”