Efficient Source of Single Photons: A Single Quantum Dot in a Micropost Microcavity

Pelton, Matthew; Santori, Charles; Vučković, Jelena; Zhang, Bingyang; Solomon, Glenn S.; Plant, Jocelyn; Yamamoto, Yoshihisa

doi:10.1103/physrevlett.89.233602

Cited by 625 publications

(436 citation statements)

References 21 publications

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“…Note that the dephasing time of the emission lines measured as in ref. 7 does not relate to the photon indistinguishability measured using the Hong Ou Mandel experiment. Indeed, the latter measurement tests the indistinguishability of photons emitted 2.2 ns apart by the same QD.…”

Section: Resultsmentioning

confidence: 81%

“…Recent years have seen important progress in the development of bright single-photon sources in solid-state systems using semiconductor self-assembled quantum dots (QDs) 6 inserted in photonic structures [7][8][9][10] . QDs confine carriers in the three directions of space and present discrete energy states.…”

mentioning

confidence: 99%

“…However, because only a few per cent of the emitted photons can be collected for QDs in bulk semiconductors, control of the QD spontaneous emission is needed to obtain bright quantum light sources. One can for instance insert the QD in a cavity to increase the local density of electromagnetic modes and accelerate its spontaneous emission into a given optical mode 14,7,8,10 . Another possibility is to use subwavelength waveguides to inhibit the emission in most directions of space 9,15 .…”

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confidence: 99%

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Bright solid-state sources of indistinguishable single photons

et al. 2013

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Bright sources of indistinguishable single photons are strongly needed for the scalability of quantum information processing. Semiconductor quantum dots are promising systems to build such sources. Several works demonstrated emission of indistinguishable photons while others proposed various approaches to efficiently collect them. Here we combine both properties and report on the fabrication of ultrabright sources of indistinguishable single photons, thanks to deterministic positioning of single quantum dots in well-designed pillar cavities. Brightness as high as 0.79±0.08 collected photon per pulse is demonstrated. The indistinguishability of the photons is investigated as a function of the source brightness and the excitation conditions. We show that a two-laser excitation scheme allows reducing the fluctuations of the quantum dot electrostatic environment under high pumping conditions. With this method, we obtain 82 ± 10% indistinguishability for a brightness as large as 0.65 ± 0.06 collected photon per pulse.

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Section: Resultsmentioning

confidence: 81%

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confidence: 99%

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confidence: 99%

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Bright solid-state sources of indistinguishable single photons

et al. 2013

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“…[22][23][24][25] Emitters coupled to cavities can also serve as highly nonlinear devices operating at low photon numbers, 26 as well as efficient interfaces between photons and solid-state quantum memory. 27,28 The majority of the work to-date focused on a single emitter in a cavity, which can exhibit nearly perfect single photon purity and indistinguishability using resonant pumping techniques.…”

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confidence: 99%

Two-Photon Interference from the Far-Field Emission of Chip-Integrated Cavity-Coupled Emitters

et al. 2016

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ABSTRACT. Interactions between solid-state quantum emitters and cavities are important for a broad range of applications in quantum communication, linear optical quantum computing, nonlinear photonics, and photonic quantum simulation. These applications often require combining many devices on a single chip with identical emission wavelengths in order to generate two-photon interference, the primary mechanism for achieving effective photon-photon interactions. Such integration remains extremely challenging due to inhomogeneous broadening and fabrication errors that randomize the resonant frequencies of both the emitters and cavities. In this letter we demonstrate two-photon interference from independent cavity-coupled emitters on the same chip, providing a potential solution to this long-standing problem. We overcome spectral mismatch between different cavities due to fabrication errors by depositing and locally evaporating a thin layer of condensed nitrogen. We integrate optical heaters to tune individual dots within each cavity to the same resonance with better than 3 µeV of precision. Combining these tuning methods, we demonstrate two-photon interference between two devices spaced by less than 15 µm on the same chip with a post-selected visibility of 33%. These results pave the way to integrate multiple quantum light sources on the same chip to develop quantum photonic devices.

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“…However, up to now, most reported single photon emitters have been below 1.3 μm wavelength. [3][4][5][6][7][8] Extremely low density InAs or InAs/InGaAs QDs on GaAs substrates were reported at wavelengths up to 1.4 μm, which is the limit on these substrates. [9][10][11] InAs QDs grown on InP substrates, however, allow the growth of QDs with substantially longer emission wavelengths; tunable wavelength was reported between 1.3 and 1.7 μm.…”

Section: Introductionmentioning

confidence: 99%

Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band

Huh¹,

Hermannstädter²,

Akahane³

et al. 2012

Jpn. J. Appl. Phys.

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We use high-density InAs quantum dots, which were grown by molecular beam epitaxy on InP(311)B substrates, as photon sources in the telecommunication C band at approximately 1.55 μm. To select a small numbers of dots, we fabricate sub-micrometer sized mesas by electron beam lithography and reactive ion etching. The benefit of using high-density quantum dot samples is that at least one optically active quantum dot can be expected in every single mesa. We show that the etching rate and resulting mesa shape of the In 0.53 Al 0.22 Ga 0.25 As epitaxial layer can be varied with the chamber pressure during the etching process. Furthermore, under constant pressure and with increasing etching time, the sequential etching of the epitaxial layer and the underneath substrate leads to a significant modification in the mesa shape, too. We demonstrate that the isolation of a small number of quantum dots within one mesa results in the appearance of single quantum dot emission with a narrow line width and minimal spectral overlap between different emission lines. We moreover present significant enhancement of the luminescence collected from single dots in silver-embedded nanomesas when compared with as-etched mesas. Jae-Hoon HuhJpn. J. Appl. Phys.3/6/2012 2

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Efficient Source of Single Photons: A Single Quantum Dot in a Micropost Microcavity

Cited by 625 publications

References 21 publications

Bright solid-state sources of indistinguishable single photons

Bright solid-state sources of indistinguishable single photons

Two-Photon Interference from the Far-Field Emission of Chip-Integrated Cavity-Coupled Emitters

Silver Embedded Nanomesas as Enhanced Single Quantum Dot Emitters in the Telecommunication C Band

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