Efficient solution-processed InP quantum-dots light-emitting diodes enabled by suppressing hole injection loss

Du, Wenxuan; Cheng, Chunyan; Tian, Jianjun

doi:10.1007/s12274-022-5268-4

Cited by 7 publications

(3 citation statements)

References 46 publications

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“…To further study the changes that occur in the devices as the they age, capacitance–voltage ( C – V ) measurements are carried out in order to obtain further insights into changes in carrier injection and their subsequent recombination in the QLEDs. [ 44 ] Figure a shows the C – V and J – L – V characteristics of unaged and aged blue QLEDs.…”

Section: Resultsmentioning

confidence: 99%

Changes in Hole and Electron Injection under Electrical Stress and the Rapid Electroluminescence Loss in Blue Quantum‐Dot Light‐Emitting Devices

Ghorbani,

Chen,

Chun

et al. 2023

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Blue quantum dot light‐emitting devices (QLEDs) suffer from fast electroluminescence (EL) loss when under electrical bias. Here, it is identified that the fast EL loss in blue QLEDs is not due to a deterioration in the photoluminescence quantum yield of the quantum dots (QDs), contrary to what is commonly believed, but rather arises primarily from changes in charge injection overtime under the bias that leads to a deterioration in charge balance. Measurements on hole‐only and electron‐only devices show that hole injection into blue QDs increases over time whereas electron injection decreases. Results also show that the changes are associated with changes in hole and electron trap densities. The results are further verified using QLEDs with blue and red QDs combinations, capacitance versus voltage, and versus time characteristics of the blue QLEDs. The changes in charge injection are also observed to be partially reversible, and therefore using pulsed current instead of constant current bias for driving the blue QLEDs leads to an almost 2.5× longer lifetime at the same initial luminance. This work systematically investigates the origin of blue QLEDs EL loss and provides insights for designing improved blue QDs paving the way for QLEDs technology commercialization.

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Section: Resultsmentioning

confidence: 99%

Changes in Hole and Electron Injection under Electrical Stress and the Rapid Electroluminescence Loss in Blue Quantum‐Dot Light‐Emitting Devices

Ghorbani,

Chen,

Chun

et al. 2023

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“…This indicates a balanced charge injection in the device. 27,28 In addition, the maximum brightness and corresponding current density of the LED are 5934 cd m −2 and 202 mA cm −2 , respectively. The luminance of the LED rises smoothly with the growth of bias voltage, until reaching a high voltage of 9.8 V. This is attributed to the structural stability of the SQDs increased by KI.…”

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confidence: 99%

High Efficiency and Low Roll-Off Pure-Red Perovskite LED Enabled by Simultaneously Inhibiting Auger and Trap Recombination of Quantum Dots

Guo,

Xie,

et al. 2024

Nano Lett.

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CsPbI 3 perovskite quantum dots (QDs) could achieve pure-red emission by reducing their size, but the increased exciton binding energy (E B ) and surface defects for the small-sized QDs (SQDs) cause severe Auger and trap recombinations, thus worsening their electroluminescence (EL) performance. Herein, we utilize the dangling bonds of the SQDs as a driving force to accelerate KI dissolution to solve its low solubility in nonpolar solvents, thereby allowing K + and I − to bond to the surface of SQDs. The E B of the SQDs was decreased from 305 to 51 meV because of the attraction of K + to electrons, meanwhile surface vacancies were passivated by K + and I − . The Auger and trap recombinations were simultaneously suppressed by this difunctional ligand. The SQD-based light-emitting diode showed a stable pure-red EL peak of 639 nm, an external quantum efficiency of 25.1% with low roll-off, and a brightness of 5934 cd m −2 .

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“…However, their toxicity is a hindrance for the further development. InP has been regarded as a promising alternative to Cd-based materials, due to its large exciton Bohr radius of ∼10 nm leading to extensive photoluminescence tunability from covering the whole visible spectrum from blue (∼480 nm) to the near-infrared (∼750 nm) region. , However, the expensive, flammable and explosive precursor tri(trimethylsilyl)phosphine ((TMS) 3 P) hinder the development and application of InP-based QDs. ,− The economic and safe amine-phosphine has been reported as a precursor in synthesize InP-based QDs . To date, the PL efficiency and color purity of amine-phosphine based InP QDs is much lower than that of the one prepared by ((TMS) 3 P). − …”

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confidence: 99%

Transition Layer Assisted Synthesis of Defect Free Amine-Phosphine Based InP QDs

Wang,

Ba,

Meng

et al. 2024

Nano Lett.

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Environmentally friendly InP-based quantum dots (QDs) are promising for light-emitting diodes (LEDs) and display applications. So far, the synthesis of highly emitting InP-based QDs via safe and economically viable amine-phosphine remains a challenge. Herein, we report the synthesis of amine-phosphine based InP/ZnSe/ZnS QDs by introducing an alloyed oxidation-free In-ZnSe transition layer (TL) at the core−shell interface. The TL not only has the essential function of preventing oxidation of the core and relieving interfacial strain but also results in oriented epitaxial growth of shell. The alloyed TL significantly mitigates the nonradiative recombination at core−shell interfacial trap states, thereby boosting the photoluminescence (PL) efficiency of the QDs up to 98%. Also, the Auger recombination is suppressed, extending the biexciton lifetime from 60 to 100 ps. The electroluminescence device based on the InP-based QDs shows a high external quantum efficiency over 10%, further demonstrating high quality QDs synthesized by this process.

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Efficient solution-processed InP quantum-dots light-emitting diodes enabled by suppressing hole injection loss

Cited by 7 publications

References 46 publications

Changes in Hole and Electron Injection under Electrical Stress and the Rapid Electroluminescence Loss in Blue Quantum‐Dot Light‐Emitting Devices

Changes in Hole and Electron Injection under Electrical Stress and the Rapid Electroluminescence Loss in Blue Quantum‐Dot Light‐Emitting Devices

High Efficiency and Low Roll-Off Pure-Red Perovskite LED Enabled by Simultaneously Inhibiting Auger and Trap Recombination of Quantum Dots

Transition Layer Assisted Synthesis of Defect Free Amine-Phosphine Based InP QDs

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