2018
DOI: 10.1002/adma.201802951
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Efficient Solid‐State Photoluminescence of Graphene Quantum Dots Embedded in Boron Oxynitride for AC‐Electroluminescent Device

Abstract: Emerging graphene quantum dots (GQDs) have received much attention for use as next-generation light-emitting diodes. However, in the solid-state, π-interaction-induced aggregation-caused photoluminescence (PL) quenching (ACQ) in GQDs makes it challenging to realize high-performance devices. Herein, GQDs incorporated with boron oxynitride (GQD@BNO) are prepared from a mixture of GQDs, boric acid, and urea in water via one-step microwave heating. Due to the effective dispersion in the BNO matrix, ACQ is signific… Show more

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Cited by 70 publications
(44 citation statements)
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“…4b , the PL intensity of the 4L GQD/h-BN (red) was reduced compared to that of single-layer GQD/h-BN film (black). This indicates that the PL quenching still occurs in a structure that simply stacks GQD/h-BN films due to photon reabsorption and nonradiative energy transfer between GQDs in the vertical direction 33 , 34 . However, utilizing h-BN intercalation layers substantially improved the PL intensity since the charges generated on the GQD/h-BN film were not transported to GQDs in adjacent layers, blocked by the h-BN charge barrier (schematically shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…4b , the PL intensity of the 4L GQD/h-BN (red) was reduced compared to that of single-layer GQD/h-BN film (black). This indicates that the PL quenching still occurs in a structure that simply stacks GQD/h-BN films due to photon reabsorption and nonradiative energy transfer between GQDs in the vertical direction 33 , 34 . However, utilizing h-BN intercalation layers substantially improved the PL intensity since the charges generated on the GQD/h-BN film were not transported to GQDs in adjacent layers, blocked by the h-BN charge barrier (schematically shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Due to such structural isolation of the luminophore, the GQDs have excellent photostability against water and oxygen. [8] In addition, the rigid sp 2 bonding network imparts high thermal stability to the luminescent GQDs, [9] as with part of the 2D graphene structure with high thermal conductivity. [10] While GQDs exhibit high optical stability against external stimuli, their highly aggregative nature through π−π stacking due to the van der Waals interaction between adjacent layers, [9,11] similar to polycyclic aromatic hydrocarbons (PAHs) or π−conjugated fluorescent polymers, greatly limits their application to optoelectronic devices as luminescent materials.…”
Section: Introductionmentioning
confidence: 99%
“…[8] In addition, the rigid sp 2 bonding network imparts high thermal stability to the luminescent GQDs, [9] as with part of the 2D graphene structure with high thermal conductivity. [10] While GQDs exhibit high optical stability against external stimuli, their highly aggregative nature through π−π stacking due to the van der Waals interaction between adjacent layers, [9,11] similar to polycyclic aromatic hydrocarbons (PAHs) or π−conjugated fluorescent polymers, greatly limits their application to optoelectronic devices as luminescent materials. The π−π stacking induces aggregationcaused PL quenching (ACQ) in the solid-state [12] and can cause problems such as an increase in uncontrolled electroluminescence (EL) due to intermolecular excimer formation, which especially debilitates the generation of pure emission color in light-emitting devices made thereof.…”
Section: Introductionmentioning
confidence: 99%
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“…To prove the existence of hydrogen bonding within the composites, the XPS and FTIR measurements were performed and the experimental results are displayed in Figure . Figure (a) shows the XPS C1s spectra for both samples of GSH‐AuNCs and 26 wt.% GSH‐AuNCs/PVP composites.…”
Section: Resultsmentioning
confidence: 99%