2009
DOI: 10.1021/jp904297v
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Efficient Solar Water Splitting with a Composite “n-Si/p-CuI/n-i-p a-Si/n-p GaP/RuO2” Semiconductor Electrode

Abstract: A composite semiconductor electrode with the structure "n-Si/p-CuI/ITO/n-i-p a-Si/n-p GaP/ITO/RuO 2 " was fabricated for the purpose of achieving efficient solar water splitting. The electrode showed a stable photoanodic current due to oxygen evolution with a large negative photoshift (V p ) of about 2.2 V from an anodic current at a RuO 2 electrode. The photoshift was large enough for full water splitting. A photoelectrochemical (PEC) cell, composed of the composite electrode, a Pt counter electrode, and 0.10… Show more

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Cited by 45 publications
(35 citation statements)
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“…At the current densities necessary for a PV-EC device, earth-abundant catalysts provide OER overpotentials that range from 0.25 to 0.4 V, corresponding to η ec in the range of 75-85%. Lower overpotentials are possible with non-earth-abundant materials such as RuO 2 (4).…”
Section: Resultsmentioning
confidence: 99%
“…At the current densities necessary for a PV-EC device, earth-abundant catalysts provide OER overpotentials that range from 0.25 to 0.4 V, corresponding to η ec in the range of 75-85%. Lower overpotentials are possible with non-earth-abundant materials such as RuO 2 (4).…”
Section: Resultsmentioning
confidence: 99%
“…Although highly efficient, high costs are associated with the GaInP 2 ∕GaAs tandem cell and the catalysts and device stability is poor (52). Though less efficient (2.5-8% hydrogen production efficiency), Si-based tandem cell concepts (33,(53)(54)(55)(56) have promise of lower cost. These tandem cells typically consist of a stack of amorphous Si and Si-Ge alloys that are operated in basic electrolyte (pH > 13).…”
Section: Resultsmentioning
confidence: 99%
“…Single crystaln-Si(100) and p-Si(100) wafers with a thickness of 525 ± 25 µm were purchased from Kyodo International Inc. The n-Si(100) and p-Si(100) wafer surfaces were cleaned by a RCA cleaning method [26]. That is, the successive immersions of the wafers in a boiling mixture of 95% sulfuric acid (H 2 SO 4 ) and 30% hydrogen peroxide (H 2 O 2 ) at a volume ratio of 3:1, in a 5% hydrofluoric acid (HF) solution for 5 min, in a boiling mixture of 25% aqueous ammonium (NH 3 ), 30% H 2 O 2 and distilled water at a volume ratio of 1:1:3 for 15 min, again in the 5% HF solution for 5 min, and in a 40% ammonium fluoride (NH 4 F) solution for 5 min [26].…”
Section: Introductionmentioning
confidence: 99%
“…The n-Si(100) and p-Si(100) wafer surfaces were cleaned by a RCA cleaning method [26]. That is, the successive immersions of the wafers in a boiling mixture of 95% sulfuric acid (H 2 SO 4 ) and 30% hydrogen peroxide (H 2 O 2 ) at a volume ratio of 3:1, in a 5% hydrofluoric acid (HF) solution for 5 min, in a boiling mixture of 25% aqueous ammonium (NH 3 ), 30% H 2 O 2 and distilled water at a volume ratio of 1:1:3 for 15 min, again in the 5% HF solution for 5 min, and in a 40% ammonium fluoride (NH 4 F) solution for 5 min [26]. On the cleaned n-Si(100) or p-Si(100) surface, a WO 3 film was deposited by sputtering a W metal target under oxygen (O 2 , 40 SCCM)/argon (Ar, 60 SCCM) gas mixture and 1.5 Pa for 16 min at substrate temperature of 400˚C, using a radio frequency (RF) magnetron sputtering apparatus (Tokuda, Model CFS-8EP).…”
Section: Introductionmentioning
confidence: 99%