Efficient Sn Recovery from SnO2 by Alkane (CxHy=2x+2, 0 ≤ x ≤ 4) Reduction

Abstract

We study the mechanism of alkane reduction of SnO2 for efficient low-temperature recovery of Sn from SnO2. Based on thermodynamic simulation results, we comparatively analyze the reduction behavior and the efficiency of SnO2 reduction by H2 and alkanes (CxHy=2x+2, 0 ≤ x ≤ 4). We found that alkanes (n·CxHy) with the higher nx generally complete the reduction of SnO2 (T100) at the lower temperature. Moreover, the T100 of the SnO2 reduction by alkanes (n·CxHy) was decreased from the T100 of pure hydrogen with the same amount of hydrogen atoms (n·Hy). We found that the concentration of a gas phase product mixture, the amount of the produced solid carbon, and the T100 complementary vary as a function of the nx and ny, the total amount of carbon and hydrogen atoms in the reducing gas phase molecules. Our results demonstrate a viability of the low temperature reduction method of SnO2 by alkanes for efficient recovery of Sn from SnO2, which can be applied for Sn recovery from Sn containing industrial wastes or Sn ores with economic value added that is held by the co-produced H2.

Tin/Tin Oxide Nanostructures: Formation, Application, and Atomic and Electronic Structure Peculiarities

“…[35], and (e plasma-enhanced atomic layer deposition at 300 °C [36]. (f) Schematic diagram of an ALD proces of the deposition of tin-based layer, [1] precursor absorption process; [2] purge process; [3] co-reac tant process; [4] purge process [36]. Reprinted with permission from Ref.…”

“…Among the wide range of tin-related materials, metallic tin and its oxides, which are the most usually existing tin states in nature, particularly attracting attention from scientists because of their unique structures and properties [2]. Metallic tin is a semimetal with atomic number 50 in the periodic table of elements.…”

“…(b-e) SEM images of Sn/SnOx thin film obtained by (b) low-temperature atomic laye deposition at 120 °C, (c) sputtering deposition[30], (d) electrochemical deposition[35], and (e plasma-enhanced atomic layer deposition at 300 °C[36]. (f) Schematic diagram of an ALD proces of the deposition of tin-based layer,[1] precursor absorption process;[2] purge process;[3] co-reac tant process;[4] purge process[36]. Reprinted with permission from Ref [30].…”

Low‐temperature reduction of SnO2by floating wire‐assisted medium‐pressure H2/Ar plasma

“…[1][2][3][4][5][6] SnO 2 can be removed by the reduction of SnO 2 to form Sn metal. The reduction of SnO 2 to form Sn metal can be done by hightemperature treatments using solid carbon, [7] alkane gas, [8,9] and H 2 gas. [10] Using carbon and alkane gases for the reduction of SnO 2 to form Sn metal particles causes CO 2 emission that adds to global warming.…”